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ST Microelectronics
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Part No. |
STB60NE06L-16 STB60NE06L-16T4
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OCR Text |
60v - 0.014 w - 60a d 2 pak stripfet? ii power mosfet n typical r ds (on) = 0.014 w n avalanche rugged technology n low gate charge n high current capability n 175 o c operating temperature n low threshold drive n surface-mounting d 2 p... |
Description |
N-CHANNEL 60v - 0.014 OMH - 60a D2PAK STRIPFET II POWER MOSFET N-CHANNEL 60v - 0.014 OMH - 60a D2PAK STRIPFET II POWER MOSFET
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File Size |
344.83K /
9 Page |
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it Online |
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ST Microelectronics
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Part No. |
STY60NM60
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OCR Text |
...SD = 60a, di/dt = 100A/s, VDD = 60v, Tj = 150C (see test circuit, Figure 5) TBD TBD TBD Test Conditions Min. Typ. Max. 60 240 1.5 Unit A A V ns C A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe... |
Description |
N-CHANNEL 600V 0.50 OHM 60a MAX247 ZENER-PROTECTED MDMESH POWER MOSFET
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File Size |
114.03K /
6 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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Part No. |
STB60NE06-16
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OCR Text |
60v - 0.013 - 60a D2PAK STripFETTM II POWER MOSFET
TYPE STB60NE06-16
s s s s s s
VDSS 60 V
RDS(on) <0.016
ID 60 A
s
TYPICAL RDS(on) = 0.013 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH d... |
Description |
N-CHANNEL 60v - 0.013 OHM - 60a D2PAK STRIPFET II POWER MOSFET
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File Size |
352.09K /
9 Page |
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it Online |
Download Datasheet |
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意法半导
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Part No. |
STB60NE06L-16
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OCR Text |
60v - 0.014 w - 60a - d 2 pak osingle feature size ? o power mosfet preliminary data n typical r ds(on) = 0.014 w n avalance rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n low gate charge n high current ... |
Description |
N-Channel 60v-0.014Ω-60a-D2PAK “SINGLE FEATURE SIZETMPower MOSFET(N沟道功率MOSFET)
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File Size |
38.09K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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