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  bv-ceo Datasheet PDF File

For bv-ceo Found Datasheets File :: 2872    Search Time::1.296ms    
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    ASI[Advanced Semiconductor]
Part No. SD1169
OCR Text ...ASE CHARACTERISTICS SYMBOL BV CEO BV CEO BV EBO ICBO hFE COB GPE C IC = 100mA IC = 50mA IE = 10mA VCB = 15 V TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 18 36 4.0 5 UNITS V V V mA --- VCE = 5.0 V VCB = 12.5 V VC...
Description NPN SILICON RF POWER TRANSISTOR
From old datasheet system

File Size 18.89K  /  1 Page

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    ZXTN2010ZTA ZXTN2010Z

ZETEX[Zetex Semiconductors]
Part No. ZXTN2010ZTA ZXTN2010Z
OCR Text ...torage temperature range SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD T j , T stg LIMIT 150 60 7 5 20 1.5 12 2.1 16.8 -55 to +150 UNIT V V V A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to ambient (a) SYMBOL R JA R JA V...
Description From old datasheet system
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

File Size 122.83K  /  6 Page

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    2N5772 2N5772D26Z

FAIRCHILD[Fairchild Semiconductor]
Part No. 2N5772 2N5772D26Z
OCR Text ...ted Symbol Off Characteristics BV(BR)CEO BV(BR)CES BV(BR)CBO BV(BR)EBO ICBO ICES IEBO hFE Parameter Test Condition IC = 10mA, IB = 0 IC = 100A, VBE = 0 IC = 100A, IE = 0 IE = 100A, IC = 0 VCB = 20V, IE = 0 VCE = 20V, VBE = 0 VCE = 20V, VBE...
Description PNP Switching Transistor
NPN Switching Transistor

File Size 26.72K  /  4 Page

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    ST Microelectronics
Part No. STBV32
OCR Text ...tion T emperature Value 700 400 BV EBO 1 3 0.5 1.5 1.1 -65 to 150 150 Uni t V V V A A A A W o o C C August 2001 1/7 STBV32 THE...CEO(sus ) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat ) Collector-Emitter Saturation Vol...
Description TRANSISTOR,BJT,NPN,400V V(BR)CEO,1.5A I(C),TO-92
From old datasheet system

File Size 64.41K  /  7 Page

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    ASI[Advanced Semiconductor]
Part No. TPV5051-1 TPV50511
OCR Text ...TOR CHARACTERISTICS SYMBOL BV CEO BV CBO BV EBO hFE Cob PG C IC = 40 mA IC = 20 mA IE = 6.0 mA VCE = 20 V VCB = 28 V VCE = 28 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS 25 45 4.0 V V V --40 6.5 45 pF dB % ...
Description NPN SILICON RF POWER TRANSISTOR
From old datasheet system

File Size 15.28K  /  1 Page

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    Sharp Electrionic Component...
SHARP[Sharp Electrionic Components]
Part No. PT465F PT461 PT461F PT460 PT460F
OCR Text ... mA ICEO A V CE(sat) BV CEO BV ECO p tr tf tr tf *4 E e : Irradiance by CIE standard light source A (Tungsten Lamp) Fig. 1-a Collector Power Dissipation vs. Ambient Temperature ( PT460/460F/465F ) 120 Collector power diss...
Description Duble-end Type Phototransistor

File Size 90.85K  /  7 Page

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    Unisonic Technologies Co., Ltd.
FAIRCHILD[Fairchild Semiconductor]
Part No. TN6728A NZT6728 NZT6728L99Z
OCR Text ...25 C LIMIT DETERMINED BY BV CEO 0.01 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 1 10 V CE - COLLECTOR-EMITTER VOLTAGE (V) P8 100 TN6728A / NZT6728 PNP General Purpose Amplifier (continued) Typical Characteristi...
Description 1200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP General Purpose Amplifier

File Size 106.84K  /  4 Page

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    BULK128D-B 5249

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BULK128D-B 5249
OCR Text ...ction Temperature Value 700 400 BV EBO 4 8 2 4 55 -65 to 150 150 Unit V V V A A A A W o C o C 1/7 BULK128D-B THERMAL DATA R thj-case R ...CEO Parameter Collector Cut-off Current (V BE = -1.5 V) Collector-Emitter Leakage Current (I B = 0) ...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
From old datasheet system

File Size 213.32K  /  7 Page

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    ASI[Advanced Semiconductor]
Part No. TP2314A
OCR Text ...TER CHARACTERISTICS SYMBOL BV CEO BV CES BV CBO ICBO BV EBO hFE Cob GPE IC = 50 mA IC = 50 mA IC = 50 mA VCB = 15 V IE = 1.0 mA VCE = 5.0 V TC = 25 OC TEST CONDITIONS MINIMUM 16 36 36 TYPICAL MAXIMUM UNITS V V V ...
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
From old datasheet system

File Size 30.71K  /  1 Page

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    ASI[Advanced Semiconductor]
Part No. TP2314
OCR Text ...TER CHARACTERISTICS SYMBOL BV CEO BV CES BV CBO ICBO BV EBO hFE Cob GPE IC = 10 mA IC = 5.0 mA IC = 5.0 mA VCB = 15 V IE = 1.0 mA VCE = 5.0 V VCB = 15 V TC = 25 OC TEST CONDITIONS MINIMUM 18 36 36 TYPICAL MAXIMUM UN...
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
From old datasheet system

File Size 30.72K  /  1 Page

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For bv-ceo Found Datasheets File :: 2872    Search Time::1.296ms    
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