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				ON Semiconductor
Part No.	NTD12N10-1G NTD12N10G
OCR Text	...e data is difficult to use for calculating rise and fall because drain ? gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av)...
Description	Power MOSFET 12 Amps, 100 Volts; Package: DPAK-3 (SINGLE GAUGE); No of Pins: 4; Container: Rail; Qty per Container: 75 12 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	151.67K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MTP52N06VL-D MTP52N06VLG
OCR Text	...ce data is difficult to use for calculating rise and fall because draingate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) )...
Description	Power MOSFET 52 Amps, 60 Volts, Logic Level N-Channel TO-220
File Size	95.93K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MTB52N06VLT4 MTB52N06VL-D
OCR Text	...ce data is difficult to use for calculating rise and fall because draingate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) )...
Description	Power MOSFET 52 Amps, 60 Volts, Logic Level N-Channel D2PAK
File Size	116.59K / 12 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MMDF3N04HD
OCR Text	...ce data is difficult to use for calculating rise and fall because drain?gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) ...
Description	Power MOSFET 3 Amps, 40 Volts N Channel SO8, Dual(3A,40V,SO-8,N沟道功率双MOSFET) 功率MOSFET 3安培0伏特频道SO8封装，双条第3A0V的，SO - 8封装沟道功率双MOSFET的）
File Size	97.01K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTD5N50-D
OCR Text	...ce data is difficult to use for calculating rise and fall because draingate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) )...
Description	Power MOSFET 5 Amps, 500 Volts N-Channel DPAK
File Size	85.57K / 12 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MTY55N20E-D
OCR Text	...ce data is difficult to use for calculating rise and fall because draingate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) )...
Description	Power MOSFET 55 Amps, 200 Volts N-Channel TO-264
File Size	102.95K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MTW10N100E-D
OCR Text	...ce data is difficult to use for calculating rise and fall because draingate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) )...
Description	Power MOSFET 10 Amps, 1000 Volts N-Channel TO-247
File Size	92.83K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MTP6P20E-D
OCR Text	...ce data is difficult to use for calculating rise and fall because draingate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) )...
Description	Power MOSFET 6 Amps, 200 Volts P-Channel TO-220
File Size	97.34K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MTD4N20E-D
OCR Text	...ce data is difficult to use for calculating rise and fall because draingate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) )...
Description	Power MOSFET 4 Amps, 200 Volts N-Channel DPAK
File Size	119.96K / 12 Page	View it Online	Download Datasheet

For calculating Found Datasheets File :: 3252 Search Time::1.547ms
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