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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MTY100N10E ON2707 Y100N10E
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
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| File Size |
216.38K /
8 Page |
 View
it Online |
Download Datasheet
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MOTOROLA INC
Motorola, Inc
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| Part No. |
MMDF2P01HD ON2166 MMDF2P01HDR2
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
2 A, 12 V, 0.2 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS
From old datasheet system
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| File Size |
283.97K /
10 Page |
View
it Online |
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Motorola Mobility Holdings, Inc.
Motorola, Inc
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| Part No. |
MMDF2P02E ON2168
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS 2 A, 20 V, 0.4 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
From old datasheet system
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| File Size |
273.69K /
10 Page |
View
it Online |
Download Datasheet |
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MOTOROLA INC
Motorola, Inc.
ON Semi
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| Part No. |
MMFT3055VL MMFT3055VL_D ON2227 MMFT3055VLT3
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
TMOS POWER FET 1.5 AMPERES 60 VOLT
N-hannel Enhancement-ode Silicon Gate
From old datasheet system
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| File Size |
223.69K /
10 Page |
View
it Online |
Download Datasheet |
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