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  ds-3 Datasheet PDF File

For ds-3 Found Datasheets File :: 65068    Search Time::1.687ms    
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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ... NEW DATA TJ = 25 C 100 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 27A 2.5 INPUT NEW DATA 2.0 TJ = 175...3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.co...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

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    IRF3415L IRF3415S

IRF[International Rectifier]
Part No. IRF3415L IRF3415S
OCR Text ... 1000 3.0 ID = 37A R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 2.0 TJ = 25 C 100 1.5 TJ = 175 C 1.0 0.5 10 4 5 6 7 V DS = 50V 20s PULSE WIDTH 8 9 10...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

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    IRF3415

IRF[International Rectifier]
Part No. IRF3415
OCR Text ... 1000 3.0 ID = 37A R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 2.0 TJ = 25 C TJ = 175 C 100 1.5 1.0 0.5 10 4 5 6 7 V DS = 50V 20s PULSE WIDTH 8 9 10 ...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

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    IRF3515L IRF3515S

IRF[International Rectifier]
Part No. IRF3515L IRF3515S
OCR Text ...5 10 1.0 TJ = 25 C V DS = 50V 20s PULSE WIDTH 4 6 8 10 12 14 0.5 1 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 1...3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.co...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

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    IRF360 IRF360-15

IRF[International Rectifier]
Part No. IRF360 IRF360-15
OCR Text ...4 www.irf.com IRF360 V DS VGS RG RD D.U.T. + -V DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time...3) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 I...
Description Repetitive Avalanche Ratings
TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A)
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ... 100 0.5 10 4.0 V DS = 15V 20s PULSE WIDTH 8.0 9.0 5.0 6.0 7.0 10.0 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 14...3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.co...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

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    IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text ...acteristics 1000 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 77A I D , Drain-to-Source Current (A) TJ = 25 C TJ = 175 C 1.5 100 1.0 0.5 10 3.0 V DS = 15V 20s PULSE WIDTH 6.0 7.0 ...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB

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    IRF3706 IRF3706L IRF3706S

IRF[International Rectifier]
Part No. IRF3706 IRF3706L IRF3706S
OCR Text ... 1000 2.0 ID = 71A R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C TJ = ...3.5 4.5 5.5 6.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-...
Description Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)

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    IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR

IRF[International Rectifier]
Part No. IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text ...1000 2.5 TJ = 25 C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 62A I D , Drain-to-Source Current (A) 2.0 TJ = 175 C 1.5 100 1.0 0.5 10 3.0 V DS = 15V 20s PULSE WIDTH 6.0 7.0 4.0 5...
Description 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)

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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3708 IRF3708L IRF3708S
OCR Text ... 1000 2.5 ID = 62A R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 TJ = 25 ...3.0 4.0 6.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Sour...
Description Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62A条)
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)

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For ds-3 Found Datasheets File :: 65068    Search Time::1.687ms    
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