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SQ171Y37 0R0BSR6 APTGT2 NRF2A SEMIC IRF83 6EHL4M B0737
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    K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S281632B-NL1H
OCR Text ...resh Refresh Entry Self fefresh exit L H H CKEn-1 CKEn CS RAS CAS WE DQM BA0,1 A10/AP A11, A9 ~ A0 Note CMOS SDRAM H H X H L H X X L L L H L L H X L H L L H X H L L H H X H H X X OP code X 1,2 3 3 X X X V V...
Description 128Mb SDRAM, 3.3V, LVTTL, 100MHz
2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP

File Size 62.82K  /  8 Page

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    FVS58I-011ADA3BN-0013 FVS58I-032ADA3BN-0013 FVS58N-011ADA3BN-0013 FVS58N-032ADA3BN-0013 FVS58I-032K2R3GN-0013 FVS58N-032

List of Unclassifed Manufacturers
ETC
Part No. FVS58I-011ADA3BN-0013 FVS58I-032ADA3BN-0013 FVS58N-011ADA3BN-0013 FVS58N-032ADA3BN-0013 FVS58I-032K2R3GN-0013 FVS58N-032K2R3GN-0013 FVS58N-011ADA3GN-0013 FVS58N-032ADA3GN-0013 FVS58I-011ADA3GN-0013 FVS58I-011ADR3BN-0013 FVS58I-011ADR3GN-0013 FVS58I-011K2A3BN-0013 FVS58I-011K2A3GN-0013 FVS58I-011K2R3BN-0013 FVS58I-011K2R3GN-0013 FVS58I-032ADA3GN-0013 FVS58I-032ADR3BN-0013 FVS58I-032ADR3GN-0013 FVS58I-032K2A3BN-0013 FVS58I-032K2A3GN-0013 FVS58I-032K2R3BN-0013 FVS58N-032K2R3BN-0013 FVS58N-011K2R3BN-0013 FVS58N-011ADR3BN-0013 FVS58N-011K2A3BN-0013 FVS58N-032ADR3BN-0013 FVS58N-032K2A3BN-0013 FVS58N-011ADR3GN-0013 FVS58N-011K2A3GN-0013 FVS58N-011K2R3GN-0013 FVS58N-032ADR3GN-0013 FVS58N-032K2A3GN-0013
OCR Text ... 3 x M4 6 deep * with axial exit position L = 42/53 (aluminum/stainless steel), with radial exit position L = 53 ** Aluminium: d = 59, stainless steel: d = 61 o42 L* ~28 3 x M4 6 deep 3 x 0 12 o50f7 o58 10 Date of ...
Description Singleturn absolute encoder

File Size 191.47K  /  6 Page

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    M52S64322A-10BG M52S64322A M52S64322A-7.5BG

Elite Semiconductor Memory Technology Inc.
Part No. M52S64322A-10BG M52S64322A M52S64322A-7.5BG
OCR Text ...e given tRFC after self refresh exit. 6. A maximum of eight consecutive AUTO REFRESH commands (with tRFCmin) can be posted to any given SDRAM, and the maximum absolute interval between any AUTO REFRESH command and the next AUTO REFRESH comm...
Description 512K x 32 Bit x 4 Banks Mobile Synchronous DRAM

File Size 1,242.37K  /  47 Page

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    T431616D T431616D-5C T431616D-5CG T431616D-5S T431616D-5SG T431616D-6C T431616D-6CG T431616D-6S T431616D-6SG T431616D-7C

Taiwan Memory Technology
Part No. T431616D T431616D-5C T431616D-5CG T431616D-5S T431616D-5SG T431616D-6C T431616D-6CG T431616D-6S T431616D-6SG T431616D-7C T431616D-7CG T431616D-7S T431616D-7SG T431616E T431616E-7C T431616E-7CG T431616E-7S T431616E-7SG
OCR Text ...h SelfRefresh Entry SelfRefresh exit State Idle(3) Any Any Active(3) Active(3) Active(3) Active(3) Idle Any Active(4) Any Idle Idle Idle (SelfRefresh) CKEn-1 CKEn DQM(6) A11 A10 A0-9 CS# RAS# CAS# WE# H H H H H H H H H H H H H L H H ...
Description 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

File Size 776.20K  /  74 Page

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    W49L201S-70 W49L201 W49L201T-90 W49L201S-90 W49L201T-70

Winbond Electronics
WINBOND[Winbond]
Part No. W49L201S-70 W49L201 W49L201T-90 W49L201S-90 W49L201T-70
OCR Text ...ternate single-word command) to exit the identification mode. For the specific code, see Command Codes for Identification/Boot Block Lockout Detection. Chip Erase Operation The chip-erase mode can be initiated by a six-word command sequ...
Description 256K X 8 CMOS FLASH MEMORY
From old datasheet system

File Size 187.68K  /  23 Page

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    W981208AH W981208A

Winbond
Part No. W981208AH W981208A
OCR Text ...lf - Refresh Entry Self Refresh exit Clock suspend Mode Entry Power Down Mode Entry Clock Suspend Mode exit Power Down Mode exit Data write/Output Enable Data Write/Output Disable Device state Idle Any Any Active (3) Active (3) Active (3) A...
Description From old datasheet system
4M x 8 bit x 4 Banks SDRAM

File Size 2,167.58K  /  44 Page

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    W981216 W981216AH W981216AH-8H W981216A

WINBOND[Winbond]
Part No. W981216 W981216AH W981216AH-8H W981216A
OCR Text ...lf - Refresh Entry Self Refresh exit Clock suspend Mode Entry Power Down Mode Entry Clock Suspend Mode exit Power Down Mode exit Data write/Output Enable Data Write/Output Disable Device state Idle Any Any Active (3) Active (3) Active (3) A...
Description From old datasheet system
x16SDRAM
2M x 16 bit x 4 Banks SDRAM

File Size 2,163.19K  /  44 Page

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    EM68932DVKA EM68932DVKA-6H EM68932DVKA-75H

Etron Technology, Inc.
Part No. EM68932DVKA EM68932DVKA-6H EM68932DVKA-75H
OCR Text ...h SelfRefresh Entry SelfRefresh exit Power Down Mode Entry Power Down Mode exit Deep Power Down Entry State Idle(3) Any Any Active(3) Active(3) Active(3) Active(3) Idle Idle Any Any Active(4) Idle Idle Idle (Self Refresh) Idle/Active(5 ) ...
Description 4M x 32 Mobile DDR Synchronous DRAM (SDRAM)

File Size 326.31K  /  40 Page

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    EM68932DVKB EM68932DVKB-6H EM68932DVKB-75H

Etron Technology, Inc.
Part No. EM68932DVKB EM68932DVKB-6H EM68932DVKB-75H
OCR Text ...h SelfRefresh Entry SelfRefresh exit Power Down Mode Entry Power Down Mode exit Deep Power Down Entry State Idle(3) Any Any Active(3) Active(3) Active(3) Active(3) Idle Idle Any Any Active(4) Idle Idle Idle (Self Refresh) Idle/Active(5 ) ...
Description 4M x 32 Mobile DDR Synchronous DRAM (SDRAM)

File Size 346.45K  /  40 Page

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