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Guangdong Kexin Industr...
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| Part No. |
2SA1035-15 2SA1035-T
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| OCR Text |
... a - 1.0 dc c ur r ent gai n h fe v c e = - 5v , i c = - 2m a 180 700 noi s e v ol tage nv v c e = ?10v , i c = ?1m a , g v = 80...100 60 0 240 200 160 120 80 40 ambient temperature ta ( ?c ) collector power dissipation p c ( m... |
| Description |
PNP Transistors
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| File Size |
993.12K /
3 Page |
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ST Microelectronics
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| Part No. |
2N3700UBG
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| OCR Text |
... i b = 15 ma - 1.1 v h fe dc current gain i c = 0.1 ma v ce = 10 v 25 - 200 i c = 10 ma v ce = 10 v 45 - i c = 150 ma v ce = 10 v 100 - 300 i c = 150 ma v ce = 10 v t amb ... |
| Description |
Hi-Rel NPN bipolar transistor 80 V, 1 A
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| File Size |
406.53K /
21 Page |
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it Online |
Download Datasheet |
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Central Semiconductor C...
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| Part No. |
CMXT3090L-15
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| OCR Text |
... =3.0a, i b =60ma 145 300 mv h fe v ce =2.0v, i c =500ma 200 h fe v ce =2.0v, i c =1.0a 200 h fe v ce =2.0v, i c =3.0a 150 c ob v cb =10v, f=1.0mhz 100 pf f t v ce =10v, i c =500ma 100 mhz sot-26 case r3 (21-may 2013) www.c... |
| Description |
NPN POWER TRANSISTOR
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| File Size |
357.23K /
2 Page |
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it Online |
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Nanjing International G...
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| Part No. |
ST2N5400
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| OCR Text |
...st 2n5401 st 2n5400 st 2n5401 h fe h fe h fe h fe h fe h fe 30 50 40 60 40 50 - - - - - - - - 180 240 - - - - - ...100 a st 2n5400 st 2n5401 -v (br)cbo -v (br)cbo 130 160 - - - - v v emitter base breakdown... |
| Description |
PNP Silicon Epitaxial Planar Transistors
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| File Size |
70.61K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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