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  gydqfhg Datasheet PDF File

For gydqfhg Found Datasheets File :: 149    Search Time::3.063ms    
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    IRLR_U110A IRLRU110A IRLR110A IRLU110A IRLR110ATF IRLR110ATM IRLU110ATU

FAIRCHILD[Fairchild Semiconductor]
Part No. IRLR_U110A IRLRU110A IRLR110A IRLU110A IRLR110ATF IRLR110ATM IRLU110ATU
OCR Text gydqfhg 3RZHU 026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.336 (T...
Description 100V N-Channel Logic Level A-FET / Substitute of IRLU110
100V N-Channel Logic Level A-FET / Substitute of IRLR110
ADVANCED POWER MOSFET

File Size 254.12K  /  9 Page

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    IRLW630A IRLI630A IRLI630

IRF[International Rectifier]
FAIRCHILD[Fairchild Semiconductor]
Part No. IRLW630A IRLI630A IRLI630
OCR Text gydqfhg 3RZHU 026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 150C Operating Temperature Lower Leakage Current: 10A (Max.) @ VDS = 2...
Description N-CHANNEL MOSFET
From old datasheet system
ADVANCED POWER MOSFET

File Size 223.49K  /  7 Page

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    IRFU014A IRFR014A

Samsung semiconductor
Fairchild Semiconductor
Part No. IRFU014A IRFR014A
OCR Text gydqfhg 3RZHU 026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 60V Lower RDS(ON): 0.097 (Ty...
Description ADVANCED POWER MOSFET

File Size 213.94K  /  7 Page

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    IRFZ24A

Fairchild Semiconductor, Corp.
Part No. IRFZ24A
OCR Text gydqfhg 3RZHU 026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175C Operating Temperature Lower Leakage Current: 10A (Max.) @ VDS = 6...
Description    ADVANCED POWER MOSFET
60V N-Channel Power MOSFET(漏源电压0V的N沟道增强型功率MOS场效应管) 17 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 217.34K  /  7 Page

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    IRFI740A IRFW740A IRFWI740A

Fairchild Semiconductor
Part No. IRFI740A IRFW740A IRFWI740A
OCR Text gydqfhg 3RZHU 026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 400V Lower RDS(ON): 0.437 (T...
Description Advanced Power MOSFET

File Size 228.32K  /  7 Page

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    IRF644A

Fairchild Semiconductor
Part No. IRF644A
OCR Text gydqfhg 3RZHU 026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 250V Lower RDS(ON): 0.214 (T...
Description Advanced Power MOSFET

File Size 224.60K  /  7 Page

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    IRL510A

Fairchild Semiconductor
Part No. IRL510A
OCR Text gydqfhg 3RZHU 026)(7 FEATURES Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 100V ...
Description Advanced Power MOSFET

File Size 240.35K  /  8 Page

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    IRL540A

Fairchild Semiconductor, Corp.
Part No. IRL540A
OCR Text gydqfhg 3RZHU 026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.046 (T...
Description Advanced Power MOSFET 28 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 242.74K  /  8 Page

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    IRL620A

Fairchild Semiconductor
Part No. IRL620A
OCR Text gydqfhg 3RZHU 026)(7 FEATURES Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 200V ...
Description Advanced Power MOSFET

File Size 220.48K  /  7 Page

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    IRL630A IRL630ANL

Fairchild Semiconductor, Corp.
Part No. IRL630A IRL630ANL
OCR Text gydqfhg 3RZHU 026)(7 FEATURES Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 200V ...
Description 200V N-Channel Logic Level A-FET / Substitute of IRL630 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Advanced Power MOSFET

File Size 222.79K  /  7 Page

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For gydqfhg Found Datasheets File :: 149    Search Time::3.063ms    
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