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  iii-kt Datasheet PDF File

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    STW8NC80Z

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
Part No. STW8NC80Z
Description N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 800V 1.3 OHM 6.7A TO-247 ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 800V 1.3 OHM 6.7A TO-247 ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH⑩III MOSFET N沟道高达700V - 1.1欧姆- 7A条至247齐纳保护PowerMESH⑩三MOSFET

File Size 262.32K  /  8 Page

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    CREE POWER
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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    GS2975A GS2975ACNE3 GS2975ACNTE3Z

Gennum Corporation
Semtech Corporation
Part No. GS2975A GS2975ACNE3 GS2975ACNTE3Z
Description HD-LINX? III Multi-Rate SDI Automatic Reclocker with Dual Differential Outputs
   HD-LINX? III Multi-Rate SDI Automatic Reclocker

File Size 884.89K  /  27 Page

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    STH270N4F3-6 STH270N4F3-2

ST Microelectronics
STMicroelectronics
Part No. STH270N4F3-6 STH270N4F3-2
Description N-channel 40 V, 1.4 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-2 package
N-channel 40 V, 1.4 mΩ typ., 180 A STripFET III Power MOSFET in H2PAK-2 and H2PAK-6 packages

File Size 1,000.17K  /  19 Page

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    AM79C973 AM79C973KCW AM79C973VCW AM79C975KCW AM79C975VCW AM79C975

AMD[Advanced Micro Devices]
Part No. AM79C973 AM79C973KCW AM79C973VCW AM79C975KCW AM79C975VCW AM79C975
Description PCnet⑩-FAST III Single-Chip 10/100 Mbps PCI Ethernet Controller with Integrated PHY
PCNET⒙-FAST III SINGLE-CHIP 10/100 MBPS PCI ETHERNET CONTROLLER WITH INTEGRATED PHY
PCnet-FAST III Single-Chip 10/100 Mbps PCI Ethernet Controller with Integrated PHY

File Size 2,076.19K  /  304 Page

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    HC321 HC372 HC331 HC311 HC322 HC351 HC332

Altera Corporation
Part No. HC321 HC372 HC331 HC311 HC322 HC351 HC332
Description HardCopy III Device

File Size 306.53K  /  26 Page

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    GA3203

Gennum Corporation
Part No. GA3203
Description Programmable DynamEQ III

File Size 334.40K  /  9 Page

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    EQAXM10S

EUROQUARTZ limited
Part No. EQAXM10S
Description STRATUM III OSCILLATORS

File Size 65.40K  /  1 Page

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    Electronic Theatre Controls, Inc.
Part No. PAK-III
Description Using the PAK-III I/O Coprocessor

File Size 124.93K  /  14 Page

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    HC352

Altera Corporation
Part No. HC352
Description HardCopy III Device

File Size 301.37K  /  26 Page

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