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MRF477 CD4693 0PFTR CXA1791M CD1865 T244A AN4800A BR301
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    M62333FP M62333P M62338FP M62338P M62333E

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M62333FP M62333P M62338FP M62338P M62333E
OCR Text ... * SLAVE ADDRESS M62333 First last M62338 First last 1 0 0 1 1 1 1 1 0 0 1 1 1 0 * SUB ADDRESSS First last CHANNEL SELECT DATA X X X X X X S1 S0 S1 0 0 1 1...
Description From old datasheet system
8-BIT 3CH I2C BUS D-A CONVERTER WITH BUFFER AMPLIFIERS

File Size 30.53K  /  6 Page

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    M62334FP M62334P M62339FP M62339P

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M62334FP M62334P M62339FP M62339P
OCR Text ... * SLAVE ADDRESS M62334 First last M62339 First last 1 0 0 1 1 0 0 1 0 0 1 1 1 1 * SUB ADDRESSS First last CHANNEL SELECT DATA X X X X X X S1 S0 S1 0 0 1 1...
Description 8-BIT 4CH I2C BUS D-A CONVERTER WITH BUFFER AMPLIFIERS
8-BIT 4CH IC BUS D-A CONVERTER WITH BUFFER AMPLIFIERS

File Size 31.91K  /  6 Page

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    IRF[International Rectifier]
Part No. IRHMS597064 IRHMS593064
OCR Text ...kage For footnotes refer to the last page -45* -45* -180 208 1.67 20 890 -45 20.8 -3.8 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C 300 (0.063 in./1.6 mm from case for 10s) 9.3 ( Typical ) g www.irf.com ...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

File Size 178.54K  /  8 Page

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    LPC812M101FD20 LPC812M101JDH16 LPC812M101FDH20 LPC812M101JDH20 LPC811M001JDH16 LPC811M001FDH16 LPC812M101FDH16

NXP Semiconductors
Part No. LPC812M101FD20 LPC812M101JDH16 LPC812M101FDH20 LPC812M101JDH20 LPC811M001JDH16 LPC811M001FDH16 LPC812M101FDH16
OCR Text ...x xxxxx xxxxxxxx xxywwxr[x] the last two letters in the last line (field ?x r?) identify the boot code version and device revision. field ?y? states the year the device was manufactured. field ?ww? states the week the device was manufa...
Description 32-bit ARM Cortex-M0 microcontroller; 16 kB flash and 4 kB SRAM
32-bit ARM Cortex-M0 microcontroller; 8 kB flash and 2 kB SRAM

File Size 764.28K  /  76 Page

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    YAGEO Corporation
Part No. CC1206JRNPO0BN101 CC0805JRNPO9BN103
OCR Text ...lk case (1) please refer to "last 2-digit of 12nc" in "capacitance range & thickness for np0" (2) please refer to "last 3-digit of 12nc" in "capacitance range & thickness for np0" (3) quantity on reel depends on thickness classif...
Description SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS

File Size 477.67K  /  23 Page

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    IRF[International Rectifier]
Part No. IRHMS58160 IRHMS53160 IRHMS54160 IRHMS57160
OCR Text ...kage For footnotes refer to the last page 45* 45* 180 208 1.67 20 493 45 20.8 6.7 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C g 300 (0.063 in. /1.6 mm from case for 10s) 9.3 (Typical) www.irf.com 1 11...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL

File Size 169.82K  /  8 Page

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    IRF[International Rectifier]
Part No. IRHMS57260SE
OCR Text ...ight For footnotes refer to the last page 45 29 180 208 1.67 20 256 45 20.8 19.8 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C 300 (0.063 in.(1.6 mm from case for 10s)) 9.3 ( Typical) g www.irf.com 1 ...
Description RADIATION HARDENED POWER MOSFET

File Size 181.60K  /  8 Page

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Part No. K4S161622D-TC55
OCR Text ... ) 10 - 10 - 10 7 9 7 7 6 clk 1 last data in to row precharge t rdl(min) 1 clk 2, 5 last data in to new col.address delay t cdl(min) 1 clk 2 last data in to burst stop t bdl(min) 1 clk 2 col. address to col. address delay t ccd(min) 1 clk ...
Description 1M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO50

File Size 1,135.05K  /  43 Page

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    FZ1200R45HL3

Infineon Technologies AG
Part No. FZ1200R45HL3
OCR Text ...haltverz?gerungszeit,induktivelast turn-ondelaytime,inductiveload i c = 1200 a, v ce = 2800 v v ge = 15 v r gon = 4,0 w t d on 0,63 0,55 0,55 s s s t vj = 25c t vj = 125c t vj = 150c anstiegszeit,induktivelast risetime,ind...
Description ESD / Transient Protection Diode for Near Field Communication (NFC)

File Size 581.82K  /  9 Page

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    FZ1200R17HE4

Infineon Technologies AG
Part No. FZ1200R17HE4
OCR Text ...haltverz?gerungszeit,induktivelast turn-ondelaytime,inductiveload i c = 1200 a, v ce = 900 v v ge = 15 v r gon = 0,68 w t d on 0,68 0,79 0,81 s s s t vj = 25c t vj = 125c t vj = 150c anstiegszeit,induktivelast risetim...
Description ESD / Transient Protection Diode for Near Field Communication (NFC)

File Size 608.99K  /  9 Page

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