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  m3-based Datasheet PDF File

For m3-based Found Datasheets File :: 2074    Search Time::1.75ms    
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    IRFZ48Z IRFZ48ZL IRFZ48ZS

IRF[International Rectifier]
Part No. IRFZ48Z IRFZ48ZL IRFZ48ZS
OCR Text ...econds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA RJA Junc...based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation pe...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 277.35K  /  12 Page

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    IRFB3207 IRFS3207 IRFSL3207

IRF[International Rectifier]
Part No. IRFB3207 IRFS3207 IRFSL3207
OCR Text ... case) Mounting torque, 6-32 or M3 screw Max. 180c 130c 720 330 2.2 20 5.8 -55 to + 175 300 10lbxin (1.1Nxm) Units A W W/C V V/n...based on maximum allowable junction temperature. Package limitation current is 75A Repetitive ratin...
Description HEXFET Power MOSFET

File Size 382.32K  /  11 Page

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    MRF19030 MRF19030R3 MRF19030SR3

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MRF19030 MRF19030R3 MRF19030SR3
OCR Text ...Machine Model Class 2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max ...based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. I...
Description RF POWER FIELD EFFECT TRANSISTORS L BAND, Si, N-CHANNEL, RF POWER, MOSFET

File Size 386.08K  /  8 Page

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    MRF19060 MRF19060R3 MRF19060SR3

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF19060 MRF19060R3 MRF19060SR3
OCR Text ...Machine Model Class 1 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max ...based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. I...
Description RF POWER FIELD EFFECT TRANSISTORS L BAND, Si, N-CHANNEL, RF POWER, MOSFET

File Size 382.95K  /  8 Page

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    C7860 M7628

Hamamatsu Photonics K.K.
HAMAMATSU[Hamamatsu Corporation]
Part No. C7860 M7628
OCR Text ... OR PINS 7 & 8 OPEN 122 4-M3 TLSOA0057EA Precautions When Using Deuterium Lamps 1. High voltage is used to operate the lamp. Use extreme caution to prevent electric shocks. 2. The guarantee period will be one year after shipmen...
Description DEUTERIUM LAMP RELATED PRODUCTS 氘灯相关产品

File Size 89.66K  /  4 Page

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    IRFP054N

IRF[International Rectifier]
Power MOSFET
International Rectifier, Corp.
Part No. IRFP054N
OCR Text ...econds Mounting torque, 6-32 or M3 srew Max. 81 57 290 170 1.1 20 360 43 17 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) ...based on maximum allowable junction temperature;for recommended current-handling of the package ref...
Description Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A?
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A)
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A?)
IC/71054 24P P DIP INTERFACE 功率MOSFET(减振钢板基本\u003d 55V的,的Rds(on)\u003d 0.012ohm,身份证\u003d 81A条?

File Size 105.39K  /  8 Page

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    IRFP054V

IRF[International Rectifier]
Part No. IRFP054V
OCR Text ...econds Mounting torque, 6-32 or M3 srew Max. 93 66 360 180 1.2 20 90 18 4.7 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) U...based on maximum allowable T 175C J Starting TJ = 25C, L = 54H junction temperature. Packag...
Description Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A?)
Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A)

File Size 155.92K  /  8 Page

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    IRFP064N IRFP064NPBF

IRF[International Rectifier]
Power MOSFET
Part No. IRFP064N IRFP064NPBF
OCR Text ...econds Mounting torque, 6-32 or M3 srew Max. 110 80 390 200 1.3 20 480 59 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)...based on maximum allowable junction temperature; for recommended current-handling of the package re...
Description Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A?
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A?)

File Size 103.66K  /  8 Page

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    IRFP064V

International Rectifier
Part No. IRFP064V
OCR Text ...econds Mounting torque, 6-32 or M3 srew Max. 130 95 520 250 1.7 20 130 25 4.7 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) ...based on maximum allowable junction temperature. Package limitation current is 90A. 2 www.irf...
Description From old datasheet system
Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A)

File Size 152.71K  /  8 Page

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    IRL3705N IRL3705NPBF

IRF[International Rectifier]
Part No. IRL3705N IRL3705NPBF
OCR Text ...econds Mounting torque, 6-32 or M3 srew Max. 89 63 310 170 1.1 16 340 46 17 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) ...based on maximum allowable junction temperature; for recommended current-handling of the package re...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 102.84K  /  8 Page

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For m3-based Found Datasheets File :: 2074    Search Time::1.75ms    
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