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NEC Corp.
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| Part No. |
MC-428LFF721
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| OCR Text |
...rent i cc1 /ras, /cas cycling t rac = 50 ns 945 ma 1, 2, 3 t rc = t rc (min.) , i o = 0 ma t rac = 60 ns 855 standby current i cc2 /ras, /cas 3 v ih (min.) , i o = 0 ma 9.0 ma /ras, /cas 3 v cc - 0.2 v, i o = 0 ma 4.5 /ras only re... |
| Description |
3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作电压3.3V的动态RAM模块)
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| File Size |
279.08K /
32 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM416C4100B
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| OCR Text |
...k ? performance range speed t rac t cac t rc t pc -45 45ns 12ns 80ns 31ns -5 50ns 13ns 90ns 35ns -6 60ns 15ns 110ns 40ns ? active power dissipation speed 8k 4k -45 550 715 -5 495 660 -6 440 605 unit : mw control clocks lower data o... |
| Description |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
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| File Size |
833.81K /
35 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM53616000CK
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| OCR Text |
...tures performance range speed t rac t cac t rc t pc -5 50ns 13ns 90ns 35ns -6 60ns 15ns 110ns 40ns pin names pin name function a0 - a11 address inputs dq0 - dq35 data in/out w read/write enable ras0 , ras2 row address strobe cas0 - cas3 ... |
| Description |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4
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| File Size |
401.03K /
20 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM53616004CK
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| OCR Text |
...tures performance range speed t rac t cac t rc t hpc -5 50ns 13ns 84ns 20ns -6 60ns 15ns 104ns 25ns pin names pin name function a0 - a11 address inputs dq0 - dq35 data in/out w read/write enable ras0 , ras2 row address strobe cas0 - cas3... |
| Description |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4
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| File Size |
448.31K /
21 Page |
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it Online |
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Mitsubishi Electric, Corp.
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| Part No. |
M5M417400CJ-7S M5M417400CTP-5
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| OCR Text |
...ed value shown in this table, t rac will increase by amount that t rcd exceeds the value shown. 9: assumes that t rad 3 t rad(max) and t asc t asc(max) . 10: assumes that t cp t cp(max) and t asc 3 t asc(max) . 11: t of... |
| Description |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM 快速页面模6777216位（4194304 - Word位）动态随机存储器
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| File Size |
499.44K /
22 Page |
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it Online |
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Micron Technology, Inc.
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| Part No. |
MT4LDT164HG MT8LDT264HG
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| OCR Text |
...edo operating mode speed t rc t rac t pc t aa t cac t cas -5 84ns 50ns 20ns 25ns 13/15 **ns 8ns -6 104ns 60ns 25ns 30ns 15ns 10ns **8mb dimm fpm operating mode speed t rc t rac t pc t aa t cac t rp -6 110ns 60ns 35ns 30ns 15ns 40ns
1, 2 m... |
| Description |
1Meg x 64 DRAM SODIMMs(1M x 64动态RAM双列直插存储器模块（小外型封装）)
2Meg x 64 DRAM SODIMMs(2M x 64动态RAM双列直插存储器模块（小外型封装）)
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| File Size |
393.96K /
30 Page |
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it Online |
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Mosel Vitelic, Corp.
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| Part No. |
V53C8258H35
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| OCR Text |
...5 50 max. ras access time, (t rac ) 35 ns 40 ns 45 ns 50 ns max. column address access time, (t caa ) 18 ns 20 ns 22 ns 24 ns min. extended data out page mode cycle time, (t pc ) 14 ns 15 ns 17 ns 19 ns min. read/write cycle time, (t rc )... |
| Description |
HIGH PERFORMANCE 256K X 8 EDO PAGE MODE CMOS DYNAMIC RAM 高性能256K × 8 EDO公司页面模式的CMOS动态随机存储器
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| File Size |
221.04K /
18 Page |
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it Online |
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Atmel Corp
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| Part No. |
U4090B-NNBSP U4090B-N
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| OCR Text |
...mit mute control RECO2 RECO1 GR rac
94 8064
MIC1
5
MIC
MIC2
4
DTMF
DTMF
2
TTXA
42
TX ACL
INLDR 28
INLDT 27
TLDR
30
TLDT
29
26
Acoustical feedback suppression control
Figure 1. D... |
| Description |
Multi-standard feature phone circuit with voice switch
From old datasheet system
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| File Size |
414.25K /
31 Page |
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it Online |
Download Datasheet |
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