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				Samsung Semiconductor
Part No.	KMM366F888CK2
OCR Text	refresh, 3.3v the samsung kmm366f80(8)3ck2 is a 8mx64bits dynamic ram high density memory module. the samsung kmm366f80(8)3ck2 consists of e...4k 4k/64ms kmm366f883ck2 soj 8k 4k/64ms 8k/64ms pin configurations note : a12 is used for only kmm36...
Description	(KMM366F883(8)CK2) DRAM Module
File Size	327.20K / 20 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	M374F3200DJ1-C M374F3280DJ1-C
OCR Text	refresh, 3.3V GENERAL DESCRIPTION The Samsung M374F320(8)0DJ1-C is a 32Mx72bits Dynamic RAM high density memory module. The Samsung M374F3...4k 8K CBR ref. ROR ref. 4k/64ms 4k/64ms 8K/64ms PERFORMANCE RANGE Speed -C50 -C60 tRAC 50...
Description	32M x 72 DRAM DIMM with ECC Using 16Mx4, 4k & 8K refresh, 3.3V
File Size	331.11K / 20 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45
OCR Text	...mory cells within the same row. refresh cycle(4k Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh...
Description	8M X 8 EDO DRAM, 45 ns, PDSO32 8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输 (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
File Size	194.12K / 21 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM71V16735AT8
OCR Text	refresh this document is a general product description and is subject to change without notice. hynix semiconductor inc. does not assum e a...4k normal tsop-ii gold hym71v16735at8-h hym71v16735alt8-k low power hym71v16735alt8-h pc133 sdra...
Description	PC133 Sdram Unbuffered Dimm
File Size	263.02K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor
Part No.	KMM366F808CS1
OCR Text	refresh, 3.3v the samsung kmm366f80(8)4cs1 is a 8mx64bits dynamic ram high density memory module. the samsung kmm366f80(8)4cs1 consists of e...4k ref.) a0 - a12 address input (8k ref.) dq0 - dq63 data in/out w0 , w2 read/write enable oe0 , o...
Description	(KMM366F804(8)CS1) DRAM Module
File Size	329.05K / 20 Page	View it Online	Download Datasheet

				ISSI
Part No.	IS42RM32400E
OCR Text	...ential and interleave ? auto refresh (cbr) ? tcsr (temperature compensated self refresh) ? pasr (partial arrays self refresh): 1/...4k/64ms 4k/64ms 4k/64ms row addressing a0-a11 a0-a11 a0-a11 column addressing a0-a9 a0-a8 a0-a7 ba...
Description	128Mb Mobile Synchronous DRAM
File Size	361.56K / 25 Page	View it Online	Download Datasheet

				Hyundai
Part No.	HY5118164C
OCR Text	...access time(60, 70 or 80ns) and refresh cycle(1k ref. or 4k ref.) and power consumption (normal or low power with self refresh). hyundai ? s advanced circuit design and process technology allow this device to achieve high bandwidth, low pow...
Description	(HY5116164C / HY5118164C) Extended Data Out mode
File Size	98.33K / 8 Page	View it Online	Download Datasheet


Part No.	M53231600CJ0-C50
OCR Text	... x 32 dram simm using 16mx4, 4k refresh, 5v the samsung m53231600ce0/cj0-c is a 16mx32bits dynamic ram high density memory module. the samsung m53231600ce0/cj0-c consists of eight cmos 16mx4bits drams in soj packages mounted on a 72-pin gla...
Description	16M X 32 EDO DRAM MODULE, 50 ns, SMA72
File Size	437.46K / 21 Page	View it Online	Download Datasheet


Part No.	HY51V65404ASLTC50
OCR Text	...are access time(50 or 60ns) and refresh cycle(8k ref. or 4k ref.)and package(soj or tsop- ll ) and power consumption (normal or low power with self refresh). hyundai ? s advanced circuit design and process technology allow this device to ac...
Description	x4 EDO Page Mode DRAM
File Size	106.95K / 10 Page	View it Online	Download Datasheet

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