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  s-fet Datasheet PDF File

For s-fet Found Datasheets File :: 23503    Search Time::1.422ms    
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    2SJ386

HITACHI[Hitachi Semiconductor]
Part No. 2SJ386
OCR Text ...1 1. Source 2. Drain 3. Gate S 2SJ386 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel tem...
Description Silicon P-Channel MOS FET

File Size 37.10K  /  7 Page

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    2SJ387 2SJ387L 2SJ387S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ387 2SJ387L 2SJ387S
OCR Text S) Silicon P-Channel MOS FET Application High speed power switching Features * * * * Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter O...
Description Silicon P-Channel MOS FET

File Size 46.71K  /  10 Page

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    2SJ399

Hitachi Semiconductor
Part No. 2SJ399
OCR Text ...Source 2. Gate 3. Drain G S 2SJ399 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel tem...
Description Silicon P-Channel MOS FET

File Size 36.00K  /  7 Page

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    2SJ409 2SJ409L 2SJ409S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ409 2SJ409L 2SJ409S
OCR Text S) Silicon P-Channel MOS FET Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, D...
Description    Silicon P-Channel MOS FET
Power switching MOSFET

File Size 28.01K  /  5 Page

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    2SJ410

HITACHI[Hitachi Semiconductor]
Part No. 2SJ410
OCR Text ... 1. Gate 2. Drain 3. Source S 2SJ410 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel tem...
Description    Silicon P-Channel MOS FET

File Size 29.02K  /  6 Page

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    2SJ411 D11219EJ1V0DS00

NEC[NEC]
Part No. 2SJ411 D11219EJ1V0DS00
OCR Text ...SS VGSS ID(DC) ID(pulse) PW 10 s Duty cycle 1 % TA = 25 C TC = 25 C VGS = 0 VDS = 0 Gate Source (S) Protection Diode PIN CONNECTIONS G: Gate D: Drain S: Source TEST CONDITIONS RATING -30 -20/+10 5.0 20.0 12.0 MIN. UNIT V V ...
Description    P-CHANNEL SIGNAL MOS FET FOR SWITCHING
From old datasheet system

File Size 67.31K  /  6 Page

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    2SJ448

NEC[NEC]
Part No. 2SJ448
OCR Text ....3 3 0.1 4 0.2 Built-in G-S Gate Protection Diodes High Avalanche Capability Ratings Isolated TO-220 Package ABSOLUTE MAXIMUM RATIN...FET features and application switching power supply. Application circuits using Power MOS FET. Safe ...
Description SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 117.41K  /  8 Page

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    2SJ449 2SJ449JM

NEC[NEC]
Part No. 2SJ449 2SJ449JM
OCR Text ...gle Avalanche Energy** * PW 10 s, Duty Cycle 1 % Tch Tstg IAS EAS 35 2.0 150 -6.0 180 -55 to +150 C 123 1. Gate 2. Drain 3. Sour...FET features and application switching power supply. Application circuits using Power MOS FET. Safe ...
Description Pch vertical DMOS FET MP-45F
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 116.80K  /  8 Page

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    2SJ450

HITACHI[Hitachi Semiconductor]
Part No. 2SJ450
OCR Text ...ate 2. Drain 3. Source 4. Drain S 3 G 2SJ450 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Drain peak current Channel dissipation Channel temperature Stor...
Description    Silicon P-Channel MOS FET

File Size 43.82K  /  9 Page

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    2SJ451

Hitachi Semiconductor
Part No. 2SJ451
OCR Text ...Source 2. Gate 3. Drain G S 2SJ451 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ...
Description    Silicon P-Channel MOS FET

File Size 39.56K  /  8 Page

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For s-fet Found Datasheets File :: 23503    Search Time::1.422ms    
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