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| OCR Text |
silicon solution, inc. ? 1-800-379-4774 1 rev. a 04/17/01 is62lv12816all issi ? issi reserves the right to make changes to its products at any time without notice in order to improve design and supply the be st possible product. we assume n... |
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84.65K /
10 Page |
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ISSI
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IS61SPS25632D IS61SPS25632T IS61SPS25636T IS61LPS51218T
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silicon solution, inc. ? 1-800-379-4774 1 preliminary information rev. 00b 05/09/01 this document contains preliminary information data. issi reserves the right to make changes to its products at any time witho ut notice in order to improv... |
| Description |
256Kx32 Synchronous Pipelined Static RAM
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| File Size |
177.88K /
20 Page |
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BUT11AI_2
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silicon Diffused Power Transistor
BUT11AI
GENERAL DESCRIPTION
Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, ... |
| Description |
From old datasheet system
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| File Size |
41.40K /
6 Page |
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NXP Semiconductors N.V.
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BUT11APX_1 BUT11APX127
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| OCR Text |
silicon Diffused Power Transistor
BUT11APX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits... |
| Description |
From old datasheet system
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| File Size |
57.72K /
8 Page |
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BUT11AX_1
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| OCR Text |
silicon Diffused Power Transistor
BUT11AX
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor contr... |
| Description |
From old datasheet system
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| File Size |
105.99K /
8 Page |
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it Online |
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DM106B
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...orated ferromagnetic alloy on a silicon substrate. (The element can be used for automatic shut off of tape recorders, as a contactless switch, and as a general detector of rotational motion.) Features * Low power consumption M-110 (Plastic)... |
| Description |
From old datasheet system
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| File Size |
99.66K /
5 Page |
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DMILL
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...MOS technology fabricated using silicon On Insulator (SOI) substrate. The decision to develop new equipment for High Energy Physics (HEP) research has lead to the need of ultra hard technology. The detector electronics adjacent to the colli... |
| Description |
From old datasheet system
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| File Size |
106.02K /
16 Page |
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it Online |
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Supertex Inc
SUTEX[Supertex, Inc]
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| Part No. |
HV257 HV257X HV257FG
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| OCR Text |
...r all 32 outputs. A low voltage silicon junction diode is made available to help monitor the die temperature.
Features
32 independent high voltage amplifiers
300V operating voltage 295V output voltage 2.2V/s typical output slew rat... |
| Description |
32 CHANNEL HIGH VOLTAGE SAMPLE AND HOLD AMPLIFIER ARRAY
From old datasheet system
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| File Size |
613.28K /
9 Page |
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it Online |
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