|
|
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
Part No. |
SST39SF010A-45-4I-NHE SST39SF020A-45-4I-NHE SST39SF040-45-4I-NHE
|
OCR Text |
...ed on the fall- ing edge of the sixth we# pulse, while the command (30h) is latched on the rising edge of the sixth we# pulse. the internal erase operation begins after the sixth we# pulse. the end-of-erase can be determined using either da... |
Description |
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 5V PROM, 45 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 5V PROM, 45 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 5V PROM, 45 ns, PQCC32
|
File Size |
479.83K /
25 Page |
View
it Online |
Download Datasheet |
|
|
|
TOSHIBA
|
Part No. |
T6K53
|
OCR Text |
...s second first fourth third sixth fifth eighth seventh tenth ninth start y-adr: when 002h pixel third pixel fourth pixel fifth pixel sixth pixel seventh pixel y-adr 002h 003h 004h 005h 006h data access second first... |
Description |
Four-Grayscale Dot Matrix Graphic LCD Driver with Built-in RAM
|
File Size |
484.62K /
59 Page |
View
it Online |
Download Datasheet |
|
|
|
Microchip Technology, Inc. Silicon Storage Technology, Inc.
|
Part No. |
SST39LF200A-55-4C-B3KE SST39LF200A-45-4C-EKE SST39LF400A-55-4C-EKE
|
OCR Text |
...hed on the falling edge of the sixth we# pulse, while the command (30h or 50h) is latched on the rising edge of the sixth we# pulse. the internal erase operation begins after the sixth we# pulse. the end-of- erase operation can be determin... |
Description |
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 16 FLASH 3V PROM, 55 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 128K X 16 FLASH 3V PROM, 45 ns, PDSO48 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
|
File Size |
751.06K /
31 Page |
View
it Online |
Download Datasheet |
|
|
|
Silicon Storage Technology, Inc.
|
Part No. |
SST39LF010-45-4C-MM SST39LF020-45-4C-MM
|
OCR Text |
...hed on the falling edge of the sixth we# pulse, while the command (30h) is latched on the rising edge of the sixth we# pulse. the internal erase operation begins after the sixth we# pulse. the end-of-erase can be determined using either da... |
Description |
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 3V PROM, 45 ns, PBGA34 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 45 ns, PBGA34
|
File Size |
372.58K /
25 Page |
View
it Online |
Download Datasheet |
|
|
|
Atmel, Corp. ATMEL CORP
|
Part No. |
AT49BV002A-70VI AT49BV002AT-70JI AT49BV002AT-70JU AT49BV002A-70TI AT49BV002A-70JI AT49BV002AN-70JU AT49BV002ANT-70VJ AT49BV002AN-70VI
|
OCR Text |
...ge of c eor w e (except for the sixth cycle of the sector erase command), whichever occurs last. the data is latched by the first rising edge of c eor w e. standard microprocessor write timings are used. the address locations used in the co... |
Description |
70NS, VSOP, IND TEMP(FLASH) 256K X 8 FLASH 2.7V PROM, 70 ns, PDSO32 70NS, PLCC, IND TEMP(FLASH) 256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 70NS, PLCC, IND TEMP, GREEN(FLASH) 256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 70NS, TSOP, IND TEMP(FLASH) 256K X 8 FLASH 2.7V PROM, 70 ns, PDSO32 70NS, VSOP, IND TEMP, ROHS-A(FLASH)
|
File Size |
166.82K /
19 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|