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  vceo-600v Datasheet PDF File

For vceo-600v Found Datasheets File :: 273    Search Time::1.546ms    
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    QM50HA-HB

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM50HA-HB
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V, Collector open IC=50A, IB=67mA IC=-50A (diode forward vo...
Description MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 76.15K  /  5 Page

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    QM50HA-H

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM50HA-H
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=50A, IB=0.65A -IC=50A (diode forward voltage) IC=50A, ...
Description MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 60.38K  /  5 Page

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    QM50HY-2H

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM50HY-2H
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=50A, IB1=-IB2=1A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -...
Description MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 67.54K  /  5 Page

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    QM50TB-24B

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM50TB-24B
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=50A, IB1=0.1mA, -IB2=1.0A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module...
Description 122 x 32 pixel format, Compact LCD size
MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 85.26K  /  5 Page

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    QM50TB-24

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM50TB-24
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=50A, IB1=-IB2=1A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conduct...
Description 122 x 32 pixel format, Compact LCD size 中功率开关使用绝缘型
MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 85.53K  /  5 Page

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    QM50TB-2HB

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM50TB-2HB
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=50A, IB1=0.1mA, IB2=-1.0A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module...
Description 122 x 32 pixel format, Compact LCD size
MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 85.00K  /  5 Page

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    QM50TB-2H

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM50TB-2H
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=50A, IB1=-IB2=1A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conduct...
Description 122 x 32 pixel format, Compact LCD size
MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 85.38K  /  5 Page

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    SANREX[SanRex Corporation]
Part No. QCA200BA60
OCR Text ...aracteristics Symbol ICBO IEBO VCEO SUS VCEX SUS hFE VCE VBE sat sat Item Collector Cut-off Current Emitter Cut-off Current Collector Emitter Sustaning Voltage D.C. Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturat...
Description TRANSISTOR MODULE
From old datasheet system
Transistors Module

File Size 102.82K  /  2 Page

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    QM75DY-24B

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
Part No. QM75DY-24B
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=75A, IB1=150mA, IB2=-1.5A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module...
Description MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型

File Size 94.22K  /  5 Page

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    QM75DY-24

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM75DY-24
OCR Text ... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=75A, IB1=-IB2=1.5A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Condu...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 74.51K  /  5 Page

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For vceo-600v Found Datasheets File :: 273    Search Time::1.546ms    
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