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PANASONIC[Panasonic Semiconductor]
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| Part No. |
MA3S781D
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| OCR Text |
... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Detection efficiency Ct trr VR = 30 V IF = 1 mA IF = 30...1V
Terminal capacitance Ct (pF)
2.5
2.0
10
1.5
1
1.0
10-1
0.5
10-2 -40... |
| Description |
Silicon epitaxial planar type
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| File Size |
44.59K /
2 Page |
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Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
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| Part No. |
MA3S781E
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| OCR Text |
... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 M...1V
Terminal capacitance Ct (pF)
102
2.5
2.0
10
1.5
1
1.0
10-1
0.5
1... |
| Description |
Silicon epitaxial planar type (cathode common) 0.03 A, 2 ELEMENT, SILICON, SIGNAL DIODE
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| File Size |
44.74K /
2 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
MA3S795
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| OCR Text |
... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 M...1V
102
1.5
10
1.0
0.5
1
0
0
5
10
15
20
25
30
10-1 -40
... |
| Description |
Silicon epitaxial planar type
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| File Size |
45.27K /
2 Page |
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it Online |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
MA3X715 MA715
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| OCR Text |
... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time * Detection efficiency Ct trr VR = 30 V IF = 1 mA IF = 3...1V
1.0
3
10
1
0.5
1
0.3
10-1 -40
0
40
80
120
160
200
0
... |
| Description |
Silicon epitaxial planar type
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
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| File Size |
52.89K /
3 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
MA6Z718 MA6S718
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| OCR Text |
...arameter Forward voltage Symbol VF1 VF2 Reverse current Terminal capacitance Reverse recovery time Detection efficiency
*
1
2
3
...1V
3.0
Ct VR
103
IF(surge) tW
Ta = 25C IF(surge) tW 102
Reverse current IR (A)
10
... |
| Description |
Schottky Barrier Diodes (SBD)
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| File Size |
79.31K /
3 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
MA745 MA3J745 MA3J745MA745
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| OCR Text |
... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency
*
Conditions VR = 30 V IF = 1 mA...1V
Terminal capacitance Ct (pF)
103
VR = 30 V
2.4 2.0 1.6 1.2 0.8 0.4
102
10
1
... |
| Description |
Schottky Barrier Diodes (SBD)
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
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| File Size |
63.26K /
3 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE907
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| OCR Text |
...nitude of Diode Offset Voltage |VF1-VF2| (Difference in DC Forward Voltage Drops of any Two Diode Units) Temperature Coefficient of |VF1-VF2| |VF1-VF2| T Temperature Coefficient of Forward VF T Drop DC Forward Voltage Drop for VF Anode-to-S... |
| Description |
Integrated Circuit Diode Array
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| File Size |
26.42K /
3 Page |
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SSDI[Solid States Devices, Inc]
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| Part No. |
SED20HE25 SED20HB25
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| OCR Text |
... * www.ssdi-power.com
SYMBOL VF1 VF2 VF3 IR1 IR2 IR3 IR4 IR5 IR6 CJ CASE OUTLINE: P/N SED20HE25
VALUE 0.390 0.465 0.340 250 1.0 8 20 35 100 900
UNITS VDC VDC A mA mA mA pF
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| Description |
20 AMP 25 VOLTS SUPER SCHOTTKY RECTIFIER
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| File Size |
34.60K /
2 Page |
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it Online |
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SSDI[Solid States Devices, Inc]
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| Part No. |
SSR02C60 SSR02C50
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| OCR Text |
...com
SSR02C60 Series
Symbol
VF1 VF2 VF3 VF4 VF5 IR1 IR2 IR3 VR =1V VR =10V VR =600V CJ QC
Electrical Characteristic
Instantaneous Forward Voltage Drop (IF = 0.25A, TJ = 25C, 300 sec pulse) Instantaneous Forward Voltage Drop (IF = 0.... |
| Description |
2 AMP / 600 V SILICON CARBIDE SCHOTTKY RECTIFIER
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| File Size |
161.72K /
3 Page |
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it Online |
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Price and Availability
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