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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRFU4105Z IRFR4105Z
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| OCR Text |
...25C, ID = 1mA m VGS = 10V, ID = 18A
e
V S A
VDS = VGS, ID = 250A VDS = 15V, ID = 18A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 18A VDS = 44V VGS = 10V VDD = 28V ID = 18A RG = 24.5 VGS = 10V
e ... |
| Description |
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) 功率MOSFET（讥\u003d 55V的，的Rds（on）\u003d 24.5mohm，身份证\u003d 30A条）
Power MOSFET(Vds=55V / Rds(on)=24.5mohm / Id=30A)
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
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| File Size |
203.46K /
11 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4498E
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| OCR Text |
18a r ds(on) (at v gs =10v) < 5.8m w r ds(on) (at v gs = 4.5v) < 8.5m w symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl 2 t a =70c junction and storage temperature range -55 to 150 c thermal char... |
| Description |
30V N-Channel MOSFET
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| File Size |
388.80K /
5 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
2SK3482
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| OCR Text |
...on)1 = 33m max. (v gs =10v,i d =18a) r ds(on)2 =39m max. (v gs =4.5v,i d =18a) low c iss: c iss = 3600 pf typ. absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 100 v gate to source voltage v gss 20... |
| Description |
Super low on-state resistance: RDS(on)1 = 33m MAX.Low Ciss: Ciss = 3600 pF TYP.
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| File Size |
85.48K /
1 Page |
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it Online |
Download Datasheet |
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