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Taoglas antenna solutio...
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| Part No. |
MA603.A.ABK.001
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| OCR Text |
...400 1600 1800 2000 2200 2400 2600 2800 3000 (mhz) (db) 8 7 6 5 4 3 2 1 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 (mhz) 4. cellular ant... |
| Description |
Advanced RF Design and Materials
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| File Size |
2,826.08K /
18 Page |
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Hittite Microwave Corpo...
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| Part No. |
HMC618ALP3E
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| OCR Text |
... 1200 - 1700 1700 - 2000 2000 - 2200 mhz gain 19 23 16 19 13.5 17 db gain variation over temperature 0.012 0.008 0.008 db/c noise figure 0.65 0.85 0.75 1.1 0.85 1.15 db input return loss 22.5 18 19.5 db output return loss 13 12.5 10 db outp... |
| Description |
GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz
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| File Size |
1,052.48K /
16 Page |
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Infineon Technologies A...
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| Part No. |
FS75R12KT3
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| OCR Text |
...rrent i f = 75 a, - di f /dt = 2200 a/s (t vj =125c) v r = 600 v v ge = -15 v i rm 90,0 96,0 a a t vj = 25c t vj = 125c sperrverz?gerungsladung recoveredcharge i f = 75 a, - di f /dt = 2200 a/s (t vj =125c) v r = 600 v v ge = -... |
| Description |
EconoPACK2 Modul mit schnellem Trench
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| File Size |
418.86K /
8 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
FS75R12KE3-B9 FS75R12KE3-B9-13
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| OCR Text |
... = 70 nh v ge = 15 v, di/dt = 2200 a/s r gon = 4,7 w e on 5,00 7,50 mj mj t vj = 25c t vj = 125c abschaltverlustenergiepropuls turn-offenergylossperpulse i c = 75 a, v ce = 600 v, l s = 70 nh v ge = 15 v, du/dt = 320... |
| Description |
IGBT-Module
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| File Size |
397.18K /
8 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW25N95K3
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| OCR Text |
...v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 ... |
| Description |
N-channel 950 V, 0.32 Ohm, 22 A, TO-247 SuperMESH3(TM) Power MOSFET
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| File Size |
764.88K /
13 Page |
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it Online |
Download Datasheet |
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