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  -38a Datasheet PDF File

For -38a Found Datasheets File :: 507    Search Time::1.891ms    
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    FCA76N60N

Fairchild Semiconductor
Part No. FCA76N60N
OCR Text ... ( typ.)@ v gs = 10v, i d = 38a ? ultra low gate charge ( typ. qg = 218nc) ? low effective output capacitance ? 100% avalanche tested ? rohs compliant description the supremos mosfet, fairchild?s next generation of high voltage super...
Description FCA76N60N N-Channel MOSFET 600V, 76A, 36mΩ

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    Wabash Transformer Inc.
Part No. VDE-30P-10 VDE-56P-10 VDE-56P-126 VDE-56P-16 VDE-56P-18 VDE-56P-20 VDE1-25P-10 VDE1-40P-10 VDE1-40P-126 VDE1-43P-10 VDE1-40P-16 VDE1-40P-18 VDE1-40P-20 VDE1-40P-24 VDE1-40P-28 VDE1-40P-36 VDE1-25P-20 VDE1-25P-28 VDE1-43P-230 VDE1-25P-16 VDE1-25P-24 VDE1-25P-36 VDE1-43P-18 VDE1-43P-20 VDE1-43P-126 VDE1-43P-16 VDE1-43P-24 VDE1-43P-28 VDE1-25P-126 VDE1-25P-18 VDE2-30P-10 VDE2-30P-16 VDE2-40P-10 VDE2-40P-126 VDE2-50P-230 VDE2-50P-24 VDE2-30P-24 VDE2-40P-36 VDE2-25P-20 VDE2-25P-28 VDE2-50P-20 VDE2-40P-28 VDE2-30P-28 VDE2-25P-10 VDE2-25P-126 VDE2-43P-126 VDE2-50P-126 VDE2-43P-10 VDE2-30P-126 VDE2-50P-18 VDE2-50P-28 VDE2-50P-36 VDE2-30P-18 VDE2-30P-20 VDE2-25P-18 VDE2-40P-24 VDE2-25P-24 VDE2-40P-16 VDE2-40P-18 VDE2-40P-20 VDE2-50P-10 VDE2-50P-16 VDE2-30P-36 VDE-50P-16 VDE-50P-230 VDE-50P-36 VDE-50P-10 VDE-50P-20 VDE-50P-18 VDE-50P-28 VDE-50P-24 VDE-50P-126 VDE1-30P-126 VDE-40P-126 VDE1-50P-126 VDE-30P-126 VDE-25P-36 VDE2-25P-36 VDE-25P-10 VDE1-30P-10 VDE-30P-16 VDE1-30P-16 VDE1-30P-18 VDE-30P-18 VDE1-56P-20 VDE2-56P-20 VDE-56P-230 VDE1-56P-230 VDE2-56P-230 VDE-56P-24 VDE1-56P-24 VDE2-56P-24 VDE-56P-28 VDE1-56P-28 VDE2-56P-28 VDE-43P-126 VDE1-50P-20 VDE1-50P-230 VDE1-50P-24 VDE1-50P-28 VDE
OCR Text ... - 36 36vct @ 694ma 18v @ 1.38a - 30 vde - 30p - 10 vde1 - 30p - 10 vde2 - 30p - 10 10vct @ 3.0a 5v @ 6.0a - vde - 30p - 126 vde1 - 30p - 126 vde2 - 30p - 126 12.6vct @ 2.38a 6.3v @ 4.76a vde - 30p - 16 ...
Description International Power Transformer

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    Microsemi, Corp.
Part No. APT10026JFLL
OCR Text ...age 2 (v gs = 0v, i s = -38a) peak diode recovery dv / dt 5 reverse recovery time (i s = -38a, di / dt = 100a/s) reverse recovery charge (i s = -38a, di / dt = 100a/s) peak recovery current (i s = -38a, di / dt = 100a/s) ...
Description 30 A, 1000 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4

File Size 176.01K  /  5 Page

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    MICROSEMI POWER PRODUCTS GROUP
Part No. APT8020B2FLLG
OCR Text .... apt8020b2fll apt8020lfll 800v 38a 0.220 ? ? ? ? ? ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? popular t-max? or to-264 package ? fast recovery body diode...
Description 38 A, 800 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET

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    SENSITRON SEMICONDUCTOR
Part No. SHD218502 SHD218502A SHD218502B
OCR Text ...: 100 volt, .055 ohm, 38a mosfet isolated hermetic metal package fast sw itching low r ds (on) equivalent to irfm150 maximum ratings all ratings are at t c = 25 c unless otherwise specified. r...
Description 38 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
HERMETIC POWER MOSFET N-CHANNEL

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    IRF4B905PBF IRF4905PBF

International Rectifier
Part No. IRF4B905PBF IRF4905PBF
OCR Text ... = -1mA 0.02 VGS = -10V, ID = -38a -4.0 V VDS = VGS, ID = -250A --- S VDS = -25V, ID = -38a -25 VDS = -55V, VGS = 0V A -250 VDS = -44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 180 ID = -38a 32 nC VDS = -44V 86 VGS = -10V, See ...
Description HEXFET POWER MOSFET

File Size 171.64K  /  8 Page

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    NXP Semiconductors N.V.
Part No. BUK9230-55A
OCR Text ...see figure 1 ; see figure 3 --38a p tot total power dissipation t mb = 25 c; see figure 2 --88w static characteristics r dson drain-source on-state resistance v gs =4.5v; i d =15a; t j =25c --33m ? v gs =10v; i d =15a; t j =25c - 23...
Description N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管

File Size 172.00K  /  14 Page

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    ST Microelectronics
Part No. STB45NF06T4
OCR Text 38a to-220/d 2 pak stripfet?ii mosfet table 1: general features typical r ds (on) = 0.022 ? exceptional dv/dt capability standard threshold drive 100% avalanche tested description this mosfet is the latest development of stmi- croel...
Description N-CHANNEL 60V 0.022 OHM 38A TO-220/D2PAK STRIPFET MOSFET

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    JANTX2N6764 JANTXV2N6764 2N6764

International Rectifier
Part No. JANTX2N6764 JANTXV2N6764 2N6764
OCR Text ...150 BVDSS 100V RDS(on) 0.055 ID 38A IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geom...
Description 100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

File Size 155.56K  /  8 Page

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    IRF[International Rectifier]
Part No. JANTXV2N6764 JANTX2N6764
OCR Text ...764 BVDSS 100V RDS(on) 0.055 ID 38A 100 Volt, 0.055 HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with ...
Description POWER MOSFET N-CHANNEL(BVdss=100V/ Rds(on)=0.055ohm/ Id=38A)
POWER MOSFET N-CHANNEL(BVdss=100V Rds(on)=0.055ohm Id=38A)
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.055ohm, Id=38A)

File Size 202.44K  /  6 Page

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