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Microsemi, Corp.
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Part No. |
APT10026JFLL
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OCR Text |
...age 2 (v gs = 0v, i s = -38a) peak diode recovery dv / dt 5 reverse recovery time (i s = -38a, di / dt = 100a/s) reverse recovery charge (i s = -38a, di / dt = 100a/s) peak recovery current (i s = -38a, di / dt = 100a/s) ... |
Description |
30 A, 1000 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
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File Size |
176.01K /
5 Page |
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MICROSEMI POWER PRODUCTS GROUP
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Part No. |
APT8020B2FLLG
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OCR Text |
.... apt8020b2fll apt8020lfll 800v 38a 0.220 ? ? ? ? ? ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? popular t-max? or to-264 package ? fast recovery body diode... |
Description |
38 A, 800 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
245.11K /
5 Page |
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SENSITRON SEMICONDUCTOR
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Part No. |
SHD218502 SHD218502A SHD218502B
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OCR Text |
...: 100 volt, .055 ohm, 38a mosfet isolated hermetic metal package fast sw itching low r ds (on) equivalent to irfm150 maximum ratings all ratings are at t c = 25 c unless otherwise specified. r... |
Description |
38 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC POWER MOSFET N-CHANNEL
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File Size |
48.90K /
3 Page |
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NXP Semiconductors N.V.
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Part No. |
BUK9230-55A
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OCR Text |
...see figure 1 ; see figure 3 --38a p tot total power dissipation t mb = 25 c; see figure 2 --88w static characteristics r dson drain-source on-state resistance v gs =4.5v; i d =15a; t j =25c --33m ? v gs =10v; i d =15a; t j =25c - 23... |
Description |
N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管
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File Size |
172.00K /
14 Page |
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ST Microelectronics
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Part No. |
STB45NF06T4
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OCR Text |
38a to-220/d 2 pak stripfet?ii mosfet table 1: general features typical r ds (on) = 0.022 ? exceptional dv/dt capability standard threshold drive 100% avalanche tested description this mosfet is the latest development of stmi- croel... |
Description |
N-CHANNEL 60V 0.022 OHM 38A TO-220/D2PAK STRIPFET MOSFET
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File Size |
266.93K /
11 Page |
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IRF[International Rectifier]
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Part No. |
JANTXV2N6764 JANTX2N6764
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OCR Text |
...764 BVDSS 100V RDS(on) 0.055 ID 38A
100 Volt, 0.055 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with ... |
Description |
POWER MOSFET N-CHANNEL(BVdss=100V/ Rds(on)=0.055ohm/ Id=38A) POWER MOSFET N-CHANNEL(BVdss=100V Rds(on)=0.055ohm Id=38A) POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.055ohm, Id=38A)
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File Size |
202.44K /
6 Page |
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it Online |
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Price and Availability
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