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Panasonic
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| Part No. |
2SK3636
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| OCR Text |
... 1 a gate threshold voltage v th v ds = 25 v, i d = 1 ma 2.0 5.0 v forward transfer admittance * ? y fs ? v ds = 25 v, i d = 2 ma 1.5 2.4 v drain-source on resistance * r ds(on) v gs = 10 v, i d = 2 ma 3.2 4.0 ? diode f... |
| Description |
Power Device - Power MOS FETs
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| File Size |
55.13K /
2 Page |
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it Online |
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MAXIM - Dallas Semiconductor
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| Part No. |
MAX14606EWLT
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| OCR Text |
...w, v in = 5v, v ovlo < v ovlo_th 60 120 f a input shutdown current i in_q en high, v in = 5v, v out = 0v 6 12 f a output disable current i out_dis en low, v out = 5v, v in = 5v, v ovlo < v ovlo_th or en low, v out = 5v, v in... |
| Description |
Overvoltage Protectors with Reverse Bias Blocking
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| File Size |
201.60K /
11 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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| Part No. |
PM150CSJ060
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| OCR Text |
...ma input on threshold voltage v th(on) applied between 1.2 1.5 1.8 volts input off threshold voltage v th(off) u p -v upc , v p -v vpc , w p -v wpc , 1.7 2.0 2.3 volts u n v n w n -v nc pwm input frequency f pwm 3- f sinusoidal 15 20 ... |
| Description |
150 Amp intelligent power module for flat-base type insulated package
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| File Size |
77.84K /
6 Page |
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it Online |
Download Datasheet |
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Nexperia
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| Part No. |
PMZ320UPE
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| OCR Text |
...yp max unit [1] - 315 360 k/w r th(j-a) thermal resistance from junction to ambient in free air [2] - 145 165 k/w r th(j-sp) thermal resistance from junction to solder point - 17 20 k/w [1] device mounted on an fr4 pcb, single-sided copper,... |
| Description |
30 V, P-channel Trench MOSFET
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| File Size |
307.64K /
15 Page |
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it Online |
Download Datasheet |
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Advanced Power Electronics
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| Part No. |
4500GM
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| OCR Text |
...=2.5v, i d =5.2a - - 45 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.2 v g fs forward transconductance v ds =10v, i d =6a - 18.5 - s i dss drain-source leakage current (t j =25 o c) v ds =20v, v gs =0v - - 1 ua drain-s... |
| Description |
Search --To AP4500GM
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| File Size |
123.30K /
7 Page |
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it Online |
Download Datasheet |
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Advanced Power Electronics
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| Part No. |
4511GD
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| OCR Text |
...=4.5v, i d =5a - 30 37 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =7a - 9 - s i dss drain-source leakage current v ds =35v, v gs =0v - - 1 ua drain-source leakage current... |
| Description |
Search --To AP4511GD
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| File Size |
187.67K /
8 Page |
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it Online |
Download Datasheet |
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Advanced Power Electronics
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| Part No. |
4511GM
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| OCR Text |
... =4.5v, i d =5a - 29 37 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =7a - 9 - s i dss drain-source leakage current (t j =25 o c) v ds =35v, v gs =0v - - 1 ua drain-source l... |
| Description |
Search --To AP4511GM
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| File Size |
133.49K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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