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  .8w Datasheet PDF File

For .8w Found Datasheets File :: 2711    Search Time::2.078ms    
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    NTE291 NTE292

NTE[NTE Electronics]
Part No. NTE291 NTE292
OCR Text .... . . . . . . . . . . . . . . 1.8w Derate Linearly Above TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0144W/C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description Silicon Complementary Transistors Medium Power Amp, Switch

File Size 23.36K  /  2 Page

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    NTE472

NTE Electronics, Inc.
NTE[NTE Electronics]
Part No. NTE472
OCR Text 8W @ 175MHz Description: The NTE472 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator applications in military, mobile marine and citizens band equipment. Suitable for use as output driver or pre-driver...
Description Silicon NPN Transistor RF Power Output PO = 1.8w @ 175MHz

File Size 21.23K  /  2 Page

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    TCC598 SD1448 2806

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. TCC598 SD1448 2806
OCR Text ... MHz PSYNC = 4 W f = 1 MHz = 0.8w VCE = 25 V VCE = 25 V VCE = 25 V VCB = 25 V IC = 850 mA IC = 850 mA IC = 850 mA 4.0 7.0 -- -- -- -- -- -- -- -- -60 20 W dB dBc pF Note 2: P OUT = 4W Note 3: Levels relative t...
Description From old datasheet system
RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

File Size 70.02K  /  6 Page

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    IRF7103 IRF7103TR IRF7103N

International Rectifier
Part No. IRF7103 IRF7103TR IRF7103N
OCR Text ...r dissipation of greater than 0.8w is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TC = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continu...
Description Power MOSFET(Vdss=50V/ Rds(on)=0.130ohm/ Id=3.0A)
Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A)
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package

File Size 165.28K  /  9 Page

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    IRF7104 IRF7104TR

International Rectifier
Part No. IRF7104 IRF7104TR
OCR Text ...r dissipation of greater than 0.8w is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TC = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continu...
Description -20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 155.01K  /  9 Page

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    SST4391 PN4391 2N4393 2N4391 SST4393 2N4392 PN4392 PN4393 SST4392

Calogic LLC
CALOGIC[Calogic LLC]
CALOGIC[Calogic, LLC]
Part No. SST4391 PN4391 2N4393 2N4391 SST4393 2N4392 PN4392 PN4393 SST4392
OCR Text ...O-92 SOT-23 Power Dissipation 1.8w 360mW 350mW Derate above 25oC 10mW/ oC 3.3mW/ oC 2.8mW/ oC Plastic Storage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +150oC Operating . . . . . . . . . . . . . . . . . . . . . . . . ....
Description N-Channel JFET Switch N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18

File Size 29.71K  /  2 Page

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    ST Microelectronics
Part No. TDA2030
OCR Text ...ut power is 12W on a 4 load and 8W on a 8 (DIN45500). The TDA2030 provides high output current and has very low harmonic and cross-over distortion. Further the device incorporates an original (and patented) short circuit protection system c...
Description 14W HI-FI AUDIO AMPLIFIER

File Size 545.85K  /  13 Page

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    SGS Thomson Microelectronics
Part No. TDA2030
OCR Text ...ut power is 12W on a 4 load and 8W on a 8 (DIN45500). The TDA2030 provideshigh output current and has very low harmonic and cross-over distortion. Further the device incorporates an original (and patented) short circuit protection system co...
Description 14w Audio Hi-Fi Amplifier

File Size 194.75K  /  13 Page

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