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  0-400v Datasheet PDF File

For 0-400v Found Datasheets File :: 14953    Search Time::1.797ms    
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    Microsemi
Part No. APT47F60J
OCR Text ... 33 min typ max 540 0.23 0.15 -55 150 2500 1.03 29.2 10 1.1 parameter continuous drain current @ t...400v v gs = 0 to 10v , i d = 33a, v ds = 300v resistive switching v dd = 400v , i d =...
Description FREDFETs

File Size 172.69K  /  4 Page

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    AOTF8N50 AOT8N50

Alpha & Omega Semiconductors
Part No. AOTF8N50 AOT8N50
OCR Text ...= 600V @ 150C ID = 8A RDS(ON) < 0.85 (VGS = 10V) 100% UIS Tested! 100% R g Tested! TO-220 Top View TO-220F D G D ...400V, TJ=125C VDS=0V, VGS=30V VDS=VGS, ID=250A VGS=10V, ID=4A VDS=40V, ID=4A 3.4 4 0.63 10 0.73 1 8 ...
Description 500V, 8A N-Channel MOSFET

File Size 144.22K  /  6 Page

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    Microsemi
Part No. APT38N60SC6
OCR Text ...t38n60sc6 600v 38a 0.099 symbol parameter apt38n60b_sc6 unit v dss drain-source voltage 600 volts i d continuous drain curre...400v i d = 38a @ 25c r g = 4.3 14 ns t r rise time 29 t d(off) turn-off delay time 118 t f fall t...
Description MOSFET

File Size 133.59K  /  5 Page

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    ST Microelectronics
Part No. STTH16L06CTY
OCR Text ...equation: p = 1.06 x i f(av) + 0.036 i f 2 (rms) table 2. absolute ratings (limiting values) symbol parameter value unit v rrm repetitive p...400v t =125c r j 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 450 500 t (ns) rr...
Description Automotive Turbo 2 ultrafast high voltage rectifier

File Size 167.47K  /  9 Page

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    AOTF5N50

Alpha & Omega Semiconductors
Part No. AOTF5N50
OCR Text ...S 5 3.3 18 2.6 101 203 5 104 0.83 -50 to 150 300 AOT5N50 65 0.5 1.2 5* 3.3* Repetitive avalanche energy Single pulsed avalanche ...400V, TJ=125C VDS=0V, VGS=30V VDS=VGS, ID=250A VGS=10V, ID=2.5A VDS=40V, ID=2.5A 3.5 4.1 1.1 6 0.75 ...
Description 500V, 5A N-Channel MOSFET

File Size 144.52K  /  6 Page

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    AOTF3N50 AOT3N50

Alpha & Omega Semiconductors
Part No. AOTF3N50 AOT3N50
OCR Text ...JA RCS 3 1.9 9 2 60 120 5 74 0.6 -50 to 150 300 AOT3N50 65 0.5 1.7 3* 1.9* Repetitive avalanche energy Single pulsed avalanche e...400V, TJ=125C VDS=0V, VGS=30V VDS=VGS, ID=250A VGS=10V, ID=1.5A VDS=40V, ID=1.5A 3.5 4.1 2.3 2.8 0.7...
Description 500V, 3A N-Channel MOSFET

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    Microsemi
Part No. APT6025BFLLG
OCR Text ...pt6025bfll apt6025sfll 600v 24a 0.250 ?? ?? ? power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode pow...400v, v gs = 15v i d = 24a, r g = 5 ? inductive switching @ 125c v dd = 400v, v gs =...
Description FREDFETs

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    2SC2333

Quanzhou Jinmei Electronic Co.,Ltd.
Part No. 2SC2333
OCR Text ... time Storage time Fall time IC=0.5A;IB1=-IB2=0.1A RL=300;VCC=150V CONDITIONS IC=0.5A;IB=0.1A;L=1mA IC=0.5A; IB=0.1A IC=0.5A; IB=0.1A VCE=400V;RBE=51; Ta=125ae VCE=400V;VBE(OFF)=-5.0V VCE=400V;VBE(OFF)=-5.0V Ta=125ae VCB=400V ;IE=0 VEB=5V; ...
Description Silicon NPN Power Transistors

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    2SC2333

Savantic, Inc.
Part No. 2SC2333
OCR Text ... time Storage time Fall time IC=0.5A;IB1=-IB2=0.1A RL=300:;VCC=150V CONDITIONS IC=0.5A;IB=0.1A;L=1mA IC=0.5A; IB=0.1A IC=0.5A; IB=0.1A VCE=400V;RBE=51:; Ta=125 VCE=400V;VBE(OFF)=-5.0V VCE=400V;VBE(OFF)=-5.0V Ta=125 VCB=400V ;IE=0 VEB=5V; IC...
Description Silicon NPN Power Transistors

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    IXGK120N60C2 IXGX120N60C2

IXYS Corporation
Part No. IXGK120N60C2 IXGX120N60C2
OCR Text ...tic Values Min. Typ. Max. 600 3.0 5.5 V V 100 A 2 mA 200 nA 2.1 1.6 2.5 V V (c) 2007 IXYS CORPORATION,All rights reserved DS99515A(11...400V, RG = 1 IC = 100A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 60A, VCE = 10...
Description HiPerFAST IGBT Lightspeed 2 Series

File Size 183.42K  /  6 Page

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For 0-400v Found Datasheets File :: 14953    Search Time::1.797ms    
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