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  0.0056 Datasheet PDF File

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    2SA812 2SA812-T1B 2SA812-T2B 2SA812-L

NEC
Part No. 2SA812 2SA812-T1B 2SA812-T2B 2SA812-L
OCR Text 0.2 FEATURES * Complementary to 2SC1623 * High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) ) * High Voltage: VCEO = -50 V +0.1 0.4 +0.1 -0.05 1.5 TYP. 0.65 -0.15 QUALITY GRADE Standard Please refer to "Qua...
Description AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
Silicon transistor

File Size 296.13K  /  4 Page

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    2SB1623

Panasonic Semiconductor
Part No. 2SB1623
OCR Text ...PC Rating -60 -60 -5 -8 -4 40 2.0 150 -55 to +150 C C Unit V V V A A W 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 2.540.30 5.080.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Package Junction temperature Storage tem...
Description Silicon PNP epitaxial planer type(For power amplification)

File Size 42.79K  /  1 Page

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    2SB1626

Sanken electric
Part No. 2SB1626
OCR Text 0 ) E Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1626 -110 -110 -5 -6 -1 30(Tc=25C) 150 -55 to +150 (Ta=25C) Unit V V V A A W C C 2SB1626 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO h...
Description Silicon PNP Epitaxial Planar Transistor(Audio/ Series Regulator and General Purpose)
Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)

File Size 23.94K  /  1 Page

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    2SB1628 2SB1628ZX 2SB1628-ZX-AZ

Omron Electronics, LLC
NEC Corp.
Part No. 2SB1628 2SB1628ZX 2SB1628-ZX-AZ
OCR Text ...% Conditions Ratings -20 -16 -6.0 -3.0 -5.0 -0.2 PW 10 ms Duty cycle 50 % 16 cm2 x 0.7 mm ceramic board used -0.4 Unit V V V A A Base current (DC) Base current (pulse) IB(DC) IB(pulse) A A Total power dissipation Junction temp...
Description 3 A, 16 V, PNP, Si, POWER TRANSISTOR
3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits
Low-VCE(sat) bipolar transistor
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

File Size 122.42K  /  6 Page

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    2SB1629

NEC
Panasonic Semiconductor
Part No. 2SB1629
OCR Text ...BO ICP IC IB PC Tj Tstg 13.7-0.2 s Absolute Maximum Ratings +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 1:Base 2:Collector 3:Emitter TO-220E Full Pack Package s Electrical Characteristics Param...
Description Silicon PNP epitaxial planar type(For power amplification)

File Size 52.60K  /  3 Page

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    HITACHI[Hitachi Semiconductor]
Part No. 2SC1515K 2SC1515
OCR Text ... -- -- -- -- -- -- Max -- -- -- 0.1 300 1.0 1.5 -- 10 V V MHz pF Unit V V V A Test conditions I C = 10 A, RBE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 6 V, IC = 10 mA I C = 10 mA, IB = 1 mA I C = 10 mA, IB = 1 mA V...
Description    Silicon NPN Triple Diffused

File Size 27.47K  /  6 Page

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    2SC1515K

Hitachi Semiconductor
Part No. 2SC1515K
OCR Text ... -- -- -- -- -- -- Max -- -- -- 0.1 300 1.0 1.5 -- 10 V V MHz pF Unit V V V A Test conditions I C = 10 A, RBE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 6 V, IC = 10 mA I C = 10 mA, IB = 1 mA I C = 10 mA, IB = 1 mA V...
Description Silicon NPN Triple Diffused

File Size 33.76K  /  7 Page

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    2SC2188

Toshiba Semiconductor
Panasonic Semiconductor
Part No. 2SC2188
OCR Text ... Unit: mm 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q q 1.5 R0.9 R0.9 0.85 0.550.1 0.450.05 1.250.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitt...
Description Silicon NPN epitaxial planer type(For intermediate frequency amplification of TV image)

File Size 37.57K  /  2 Page

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    SANYO
Part No. 2SC3456
OCR Text ...y. * Fast switching speed (tf : 0.1s typ). * Wide ASO. * Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC3456] Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emi...
Description NPN Triple Diffused Planar Silicon Transistor 800V/1.5A Switching Regulator Applications

File Size 114.45K  /  5 Page

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    2SC5509 2SC5509-T2

NEC Corp.
Part No. 2SC5509 2SC5509-T2
OCR Text ... hFE Note 1 VCB = 5 V, IE = 0 mA VBE = 1 V, IC = 0 mA VCE = 2 V, IC = 10 mA - - 50 - - 70 600 600 100 nA nA - VCE = 3 V, IC = 90 mA, f = 2 GHz VCE = 2 V, IC = 50 mA, f = 2 GHz VCE = 2 , IC = 10 mA, f = 2 Hz, ZS = Zopt VCB...
Description NPN SILICON RF TRANSISTOR

File Size 79.90K  /  15 Page

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