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2SC4686 35E6C 8069X 2N342 UM6008 SMV1212 MMBT555 30VDC
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  0.345v Datasheet PDF File

For 0.345v Found Datasheets File :: 181    Search Time::1.735ms    
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    ST Microelectronics
Part No. W14NB50
OCR Text 0.40 w - 14a - to-247 powermesh ? mosfet preliminary data n typical r ds(on) = 0.40 w n extremely high dv/dt capability n 100% avalanc...345v r ds(on) static drain-source on resistance v gs = 10v i d =6.5 a 0.4 0.45 w i d(on) on stat...
Description Search --To STW14NB50

File Size 72.41K  /  5 Page

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    STU10NC70Z STU10NC70ZI

STMicroelectronics
Part No. STU10NC70Z STU10NC70ZI
OCR Text 0.58 w - 9.4a max220/i-max220 zener-protected powermesh?iii mosfet n typical r ds (on) = 0.58 w n extremely high dv/dt capability n gate-t...345v r ds(on) static drain-source on resistance v gs = 10v, i d = 5.3a 0.58 0.75 w i d(on) on sta...
Description N-CHANNEL 700V - 0.58ohm - 9.4A Max220/I-Max220 Zener-Protected PowerMESH?┥II MOSFET
N-CHANNEL 700V - 0.58ohm - 9.4A Max220/I-Max220 Zener-Protected PowerMESH?III MOSFET
N沟道高达700V - 0.58ohm -齐纳输出高达9.4A Max220/I-Max220保护的PowerMESH⑩三MOSFET

File Size 409.14K  /  10 Page

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    ST Microelectronics
Part No. P3NB60FP
OCR Text ...s drain-source voltage (v gs = 0) 600 v v dgr drain- gate voltage (r gs = 20 k w ) 600 v v gs gate-source voltage 30 v i d drain current...345v r ds(on) static drain-source on resistance v gs = 10v i d = 1.6 a 3.3 3.6 w i d(on) on stat...
Description STP3NB60

File Size 265.80K  /  9 Page

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    ST Microelectronics
Part No. P3NB80 P3NB80FP
OCR Text ...s drain-source voltage (v gs = 0) 800 v v dgr drain- gate voltage (r gs = 20 k w ) 800 v v gs gate-source voltage 30 v i d drain current...345v r ds(on) static drain-source on resistance v gs = 10v i d = 1.3 a 4.6 6.5 w i d(on) on stat...
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File Size 275.36K  /  9 Page

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    ST Microelectronics
Part No. P3NB90FP
OCR Text ... ds drain-source voltage (v gs =0) 900 v v dgr drain-gate voltage (r gs =20k w ) 900 v v gs gate- source voltage 30 v i d drain current (co...345v r ds(on) static drain-source on resistance v gs =10v,i d = 1.7 a 44.2 w symbol parameter test c...
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File Size 155.65K  /  10 Page

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    ST Microelectronics
Part No. STB6NC90Z STB6NC90Z-1
OCR Text ...s drain-source voltage (v gs = 0) 900 v v dgr drain-gate voltage (r gs = 20 k w ) 900 v v gs gate- source voltage 25 v i d drain current ...345v r ds(on) static drain-source on resistance v gs = 10v, i d = 3 a 1.55 1.9 w symbol parameter...
Description N-CHANNEL 900V - 1.55 OHM - 5.4A TO-220/FP/DPAK/IPAK ZENER-PROTECTED POWERMESH III MOSFET

File Size 538.58K  /  13 Page

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    ST Microelectronics
Part No. STP12NB30FP
OCR Text 0.34 w - 12a to-220/to-220fp powermesh? mosfet (1) i sd 60a, di/dt 400 a/ m s, v dd 24v, tj t jmax (*)limited only by maximum tempera...345v r ds(on) static drain-source on resistance v gs = 10v, i d = 6 a 0.34 0.4 w symbol parameter...
Description N-CHANNEL 300V 0.34 OHM 12A TO-220/TO-220FP POWERMESH MOSFET

File Size 153.38K  /  7 Page

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    ST Microelectronics
Part No. STW14NM50
OCR Text ...ice. stw14nm50 n-channel 500v - 0.32 w - 14a to-247 mdmesh?power mosfet n typical r ds (on) = 0.32 w n high dv/dt and avalanche capabilitie...345v r ds(on) static drain-source on resistance v gs = 10v, i d = 6a 0.3 0.35 w symbol parameter ...
Description N-CHANNEL 500V - 0.32 OHM - 14A TO-247 MDMESH POWER MOSFET

File Size 53.42K  /  5 Page

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    ST Microelectronics
Part No. STW9NB90
OCR Text 0.85 w - 9.7a - to-247 powermesh ? mosfet n typical r ds(on) = 0.85 w n extremely high dv/dt capability n 30v gate to source voltag...345v r ds(on) static drain-source on resistance v gs = 10 v i d = 4.8 a 0.85 1 w w i d(on) on st...
Description N-CHANNEL 900V - 0.85 OHM - 9.7A - TO-247 POWERMESH MOSFET

File Size 254.40K  /  8 Page

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    Advanced Monolithic Systems, Inc.
Part No. AMS3100-1.2AM
OCR Text ...s applications 6 mv ( 0.5%) max. initial tolerance (a grade) battery powered systems operating current 10 m m a to 20m...345v + - v + v - r thermocouple + - cold junction iso thermal with lm334 adjustment proc...
Description MICROPOWER VOLTAGE REFERENCE

File Size 74.58K  /  6 Page

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