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				ON Semiconductor
Part No.	MMBT2131T1-D
OCR Text	...itter breakdown voltage (i c = 10 madc) v (br)ceo 30 vdc emitterbase breakdown voltage (i e = 100 adc) v (br)ebo 5.0 vdc collector ...000001 i b , base current (a) 0.5 0.4 0.2 0.3 1.0 0.01 i c , collector current (a) 1000 100 i c , co...
Description	General Purpose Transistors PNP Bipolar Junction Transistor (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.
File Size	75.88K / 4 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOT22N50 AOTF22N50
OCR Text	...00 bv dss / ? tj 0.57 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.4 4 4.5 v r ds(on) 0.21 0.26 w ...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse...
Description	500V,22A N-Channel MOSFET
File Size	531.42K / 6 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOT20S60
OCR Text	...units 600 - - 650 700 - - - 1 - 10 - i gss gate-body leakage current - - 100 n a v gs(th) gate threshold voltage 2.8 3.4 4.1 v - 0.18 0.199 ...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 16: normalized maximum transient th...
Description	600V 20A a MOS TM Power Transistor
File Size	746.21K / 7 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOT20N60
OCR Text	...700 bv dss / ? tj 0.8 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.2 3.8 4.5 v r ds(on) 0.29 0.37 ...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance puls...
Description	600V,20A N-Channel MOSFET
File Size	599.74K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MBRS130LT309
OCR Text	...ering purposes: 260 c max. for 10 seconds ? cathode polarity band http://onsemi.com smb case 403a plastic schottky barrier rectifier 1.0 am...000001 0.1 100 10 1 0.01 0.00001 effective transient thermal resist ance figure 9. thermal respons...
Description	Schottky Power Rectifier
File Size	125.04K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOTF20N60 AOT20N60
OCR Text	...700 bv dss / ? tj 0.8 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.2 3.8 4.5 v r ds(on) 0.29 0.37 ...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse...
Description	600V,20A N-Channel MOSFET
File Size	537.45K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOTF11N60 AOT11N60
OCR Text	...00 bv dss / ? tj 0.67 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.3 3.9 4.5 v r ds(on) 0.56 0.65 ...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse...
Description	600V,11A N-Channel MOSFET
File Size	542.83K / 6 Page	View it Online	Download Datasheet

				Shenzhen Taychipst Electronic Co., Ltd
Part No.	MBR2H100
OCR Text	...? reel options: mbr2h100sft3g = 10,000 per 13 in reel/8 mm tape ? device marking: l2h ? polarity designator: cathode band ? weight: 11.7 mg ...000001 50% (duty cycle) 25% 10% 5.0% 2.0% 1.0% single pulse 1000 r(t) (c/w) 1.0 0.1 0.00001 pulse ti...
Description	Surface Mount Schottky Power Rectifier
File Size	5,796.70K / 3 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOB20S60 AOT20S60 AOTF20S60 AOB20S60L
OCR Text	...units 600 - - 650 700 - - - 1 - 10 - i gss gate-body leakage current - - 100 n a v gs(th) gate threshold voltage 2.8 3.4 4.1 v - 0.18 0.199 ...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 16: normalized maximum transient th...
Description	600V 20A a MOS TM Power Transistor 600V 20A a MOS Power Transistor
File Size	322.00K / 7 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4818B
OCR Text	...0v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 1.2 1.8 2.4 v i d(on) 48 a 15.5 19 t j =125c 21 25 18.5 26 m w g fs 3...000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 9: s...
Description	30V Dual N-channel MOSFET
File Size	296.34K / 6 Page	View it Online	Download Datasheet

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