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  120 250 Datasheet PDF File

For 120 250 Found Datasheets File :: 93679    Search Time::4.188ms    
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    2SC5010 2SC5010-T1 2SC5010-T1-T2

NEC Corp.
Part No. 2SC5010 2SC5010-T1 2SC5010-T1-T2
OCR Text ...B = 200 A 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A 20 A 200 100 50 10 20 10 0 2 4 6 8 1 2 5 10 20 50 100 VCE - Col...250 .258 .267 .277 .288 .300 .312 .321 .335 S21 ANG -14.2 -28.4 -41.9 -54.9 -66.5 -77.0 -86.4 -9...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
128 x 128 pixel format, LED or EL Backlight available

File Size 59.95K  /  10 Page

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    2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text ...EBO hFE fT Cre |S21e|2 NF 11 50 120 6.5 0.5 13 1.1 2.0 0.9 MIN. TYP. MAX. 1.0 1.0 250 GHz pF dB dB UNIT TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA*1 VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz*2 VCE ...
Description NPN epitaxial-type silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 50.99K  /  8 Page

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    2SC5012 2SC5012-T1 2SC5012-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5012 2SC5012-T1 2SC5012-T2
OCR Text ...rrent Gain 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A 20 A 200 100 50 20 10 20 10 0 2 8 4 6 10 VCE - Collector to Emitter Voltage - V 12 1 10 IC - Collector Current - mA 100 GAIN BANDWIDTH PRODUCT vs. COLL...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.43K  /  7 Page

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    2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB

NEC[NEC]
NEC Corp.
Part No. 2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text ...Gain 20 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A 20 A 200 100 50 10 20 10 0 2 8 4 6 10 VCE - Collector to Emitter Voltage - V 12 1 2 5 10 20 IC - Collector Current - mA 50 GAIN BANDWIDTH PRODUCT vs...
Description L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 51.33K  /  8 Page

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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ...B = 200 A 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A 20 A 2 4 6 8 500 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 3 V hFE - D...250 .248 .254 .262 .264 ANG -15.0 -29.7 -41.9 -53.1 -63.9 -72.9 -81.9 -88.9 -96.5 -105.0 -111.5 -118...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.94K  /  8 Page

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    2SC5019

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5019
OCR Text ...- VCE 24 Ta=25C 20 IB=200A 100 120 VCE=8V IC -- VBE Collector power dissipation PC (W) 1.2 Collector current IC (mA) Collector current IC (mA) Printed circut board: Copper foil area of 1cm2 or more, and the board thicknes...
Description Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

File Size 37.02K  /  2 Page

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    2SC5026

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5026
OCR Text ...in typ max 0.1 80 80 5 120 60 0.15 0.85 120 10 *2 2.50.1 +0.25 Unit A V V V 340 0.3 1.2 V V MHz 20 pF P...250 Transition frequency fT (MHz) 0.3 1 3 10 30 10 3 25C 1 75C 0.3 0.1 0.03 0.01 0.01 0.03 Ta...
Description Silicon NPN epitaxial planer type(For low-frequency output amplification)

File Size 36.23K  /  2 Page

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    2SC5049

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Toshiba Semiconductor
Part No. 2SC5049
OCR Text ... 50 -- 7.0 12.0 -- Typ -- -- -- 120 0.45 10.0 15.0 1.2 Max 10 1 10 250 0.8 -- -- 2.5 pF GHz dB dB Unit A mA A Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = ...
Description Silicon NPN Epitaxial npn型硅外延

File Size 23.39K  /  5 Page

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    2SC5050

HITACHI[Hitachi Semiconductor]
Part No. 2SC5050
OCR Text ... 8.0 -- 11.0 -- Typ -- -- -- -- 120 0.6 11.0 13.5 14.0 1.1 Max -- 10 1 10 250 1.1 -- -- -- 2.0 pF GHz dB dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA V...
Description Silicon NPN Epitaxial

File Size 23.65K  /  5 Page

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    2SC5051

HITACHI[Hitachi Semiconductor]
Part No. 2SC5051
OCR Text ... 8.0 -- 11.5 -- Typ -- -- -- -- 120 0.65 11.0 14.0 14.5 1.1 Max -- 10 1 10 250 1.15 -- -- -- 2.0 pF GHz dB dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA...
Description Silicon NPN Epitaxial

File Size 23.89K  /  5 Page

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