Part Number Hot Search : 
SMBJ13 2R103J BA301 2SD557 31DF2 2N5551 251931B TFS70H33
Product Description
Full Text Search
  128k x 8 static ram density 1 Datasheet PDF File

For 128k x 8 static ram density 1 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Integrated Silicon Solution, Inc.
Part No. IS61LV12816L-8T IS61LV12816L-10BLI IS61LV12816L-10LQLI IS61LV12816L-8BI IS61LV12816L-8TI IS61LV12816L-10TLI IS61LV12816L-8TL
Description 128k x 16 HIGH-SPEED CMOS static ram WITH 3.3V SUPPLY 128k x 16 STANDARD Sram, 10 ns, PQFP44
128k x 16 HIGH-SPEED CMOS static ram WITH 3.3V SUPPLY 128k x 16 STANDARD Sram, 8 ns, PBGA48
128k x 16 HIGH-SPEED CMOS static ram WITH 3.3V SUPPLY 128k x 16 STANDARD Sram, 8 ns, PDSO44
128k x 16 HIGH-SPEED CMOS static ram WITH 3.3V SUPPLY 128k x 16 STANDARD Sram, 10 ns, PDSO44
File Size 108.43K  /  16 Page

View it Online

Download Datasheet





    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. M38030F2L-xxxHP M38030F2L-xxxKP M38030F2L-xxxSP M38030F2L-xxxWG M38030MAL-xxxWG M38030MAL-xxxKP M38030FAL-xxxSP M38031FAL-xxxHP M38030FAL-xxxWG M38030MAL-xxxHP M38030FAL-xxxKP M38031FAL-xxxKP M38030FAL-xxxHP M38031FAL-xxxSP M38031FAL-xxxWG M38030MAL-xxxSP M38030F3L-xxxHP M38030F3L-xxxWG M38030M3L-xxxKP M38030F3L-xxxSP M38030F3L-xxxKP M38030M3L-xxxHP M38030FBL-xxxWG M38030MBL-xxxHP M38030FBL-xxxHP M38030FBL-xxxSP M38030MBL-xxxKP M38030M2L-xxxHP M38030M2L-xxxKP M38030M2L-xxxSP M38030M2L-xxxWG M38031F2L-xxxHP M38031F2L-xxxKP M38031F2L-xxxSP M38031F2L-xxxWG M38030FB-xxxHP M38031FBL-xxxSP M38035MBL-xxxSP M38038FBL-xxxSP M38039FBL-xxxSP M38030MBL-xxxSP M38036MBL-xxxSP M38037FBL-xxxSP M38037MBL-xxxSP M38036FBL-xxxSP M38038MBL-xxxSP M38031FC-xxxHP M38031FC-xxxKP M38031FC-xxxWG M38031FCL-xxxHP M38031FCL-xxxKP M38031FCL-xxxSP M38031FCL-xxxWG M38031F5-xxxKP M38031F5-xxxSP M38031F5-xxxWG M38031F5L-xxxHP M38031F5L-xxxKP M38031F5L-xxxSP M38031F5L-xxxWG M38030F1-xxxHP M38030F1-xxxKP M38030F1-xxxSP M38030F1-xxxWG M38030F1L-xxxHP M38030F1L-xxxKP M38030F1L-xxxSP M38030F1L-xxxWG M38031F1-xxxKP M38031F1-xxxWG M38031F1L-xxxHP M38031F1L-xxxKP M38031F6-xxxHP M38031F6-xxxKP M38031F6-xxxSP M38031F6-xxxWG M
Description 256 Kbit (32K x 8) nvSram; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; density: 256 Kb; Package: SOIC
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C
256K (32K x 8) static ram; density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V;
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 1 MHz to 200 MHz; Outputs: 6
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12
8-Mbit (512K x 16) static ram; density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V;
9-Mbit (256K x 36/512K x 18) Pipelined Sram; Architecture: Standard Sync, Pipeline SCD; density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through Sram; Architecture: Standard Sync, Flow-through; density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
18-Mbit QDR(TM)-II Sram 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Four Output PCI-x and General Purpose Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 140 MHz; Outputs: 4; Operating Range: 0 to 70 C
18-Mbit QDR(TM)-II Sram 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
9-Mbit (256K x 36/512K x 18) Flow-Through Sram with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 2.4 to 2.6 V
4-Mbit (512K x 8) static ram; density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.50 to 5.50 V;
4-Mbit (256K x 16) static ram; density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V;
64K x 16 static ram; density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
1-Mbit (64K x 16) static ram; density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined Sram; Architecture: Standard Sync, Pipeline SCD; density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
1-Mbit (64K x 16) static ram; density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
4 Mbit (512K x 8/256K x 16) nvSram; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; density: 4 Mb; Package: TSOP
4 Mbit (512K x 8/256K x 16) nvSram; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; density: 4 Mb; Package: TSOP
16-Mbit (1M x 16 / 2M x 8) static ram; density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V;
4K x 16/18 and 8K x 16/18 Dual-Port static ram with SEM, INT, BUSY; density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns
9-Mbit (256K x 36/512K x 18) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through Sram with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V
9-Mbit (256K x 36/512K x 18) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
8-Mbit (512K x 16) static ram; density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 4.50 to 5.50 V;
9-Mbit (256K x 36/512K x 18) Flow-Through Sram; Architecture: Standard Sync, Flow-through; density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 static ram; density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync Sram; Architecture: Standard Sync, Pipeline DCD; density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
4-Mbit (256K x 16) static ram; density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1024K x 8) static ram; density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
18-Mbit (512K x 36/1M x 18) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 static ram; density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1M x 8) static ram; density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: -40 to 85 C
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C
18-Mbit (512K x 36/1M x 18) Flow-Through Sram with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
512K x 8 static ram; density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.5 to 5.5 V;
18-Mbit (512K x 36/1M x 18) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 2.4 to 2.6 V
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C
2M x 8 static ram; density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V;
16 Mbit (512K x 32) static ram; density: 16 Mb; Organization: 512Kb x 32; Vcc (V): 3.0 to 3.6 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: 0 to 70 C
8-Mbit (1M x 8) static ram; density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V;
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6
2-Mbit (128k x 16) static ram; density: 2 Mb; Organization: 128kb x 16; Vcc (V): 3.0 to 3.6 V;
16-Mbit (1M x 16) static ram; density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (256K x 18) Pipelined DCD Sync Sram; Architecture: Standard Sync, Pipeline DCD; density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V
512K (32K x 16) static ram; density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (128k x 36) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 4 Mb; Organization: 128kb x 36; Vcc (V): 3.1 to 3.6 V
1M x 16 static ram; density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C
MoBL(R) 2 Mbit (128k x 16) static ram; density: 2 Mb; Organization: 128kb x 16; Vcc (V): 2.20 to 3.60 V;
rambus(R) xDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4
2-Mbit (128k x 16) static ram; density: 2 Mb; Organization: 128kb x 16; Vcc (V): 2.20 to 3.60 V;
4-Mbit (128k x 36) Pipelined Sync Sram; Architecture: Standard Sync, Pipeline SCD; density: 4 Mb; Organization: 128kb x 36; Vcc (V): 3.1 to 3.6 V
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7
2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 10; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7
18-Mbit DDR-II Sram 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 25 MHz to 100 MHz; Output Frequency Range: 25 MHz to 100 MHz; Operating Range: 0 to 70 C; Package: SOIC
Low Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机
Three-PLL General-Purpose EPROM Programmable Clock Generator; Voltage (V): 3.3/5.0 V; Input Range: 1 MHz to 30 MHz; Output Range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机
8-Mbit (512K x 16) MoBL(R) static ram; density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V SDram Buffer for Mobile PCs with 4 SO-DIMMs; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 100 MHz; Outputs: 10; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: -40 to 85 C 单芯位CMOS微机
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128k x 16) static ram; density: 2 Mb; Organization: 128kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机
MoBL(R) 1 Mbit (128k x 8) static ram; density: 1 Mb; Organization: 128kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
18-Mbit QDR(TM)-II Sram 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
1-Mbit (128k x 8) static ram; density: 1 Mb; Organization: 128kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机
4-Mbit (256K x 18) Pipelined Sync Sram; Architecture: Standard Sync, Pipeline SCD; density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
2-Mbit (64K x 32) Pipelined Sync Sram; Architecture: Standard Sync, Pipeline SCD; density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
200-MHz Field Programmable Zero Delay Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 10 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128k x 16) static ram; density: 2 Mb; Organization: 128kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
2-Mbit (256K x 8) static ram; density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机
Very Low Jitter Field and Factory Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 10 MHz to 133 MHz; Output Range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 单芯位CMOS微机
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
Quad PLL Clock Generator with 2-Wire Serial Interface; Voltage (V): 2.5/3.3 V; Input Range: 27 MHz to 27 MHz; Output Range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C 单芯位CMOS微机
High Speed Multi-phase PLL Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating Range: 0 to 70 C 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 18; Operating Range: -40 to 85 C 单芯位CMOS微机
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 4 MHz to 32 MHz; Output Frequency Range: 4 MHz to 32 MHz; Operating Range: 0 to 70 C; Package: SOIC
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9
File Size 1,602.57K  /  119 Page

View it Online

Download Datasheet
    Integrated Silicon Solution, Inc.
Part No. IS61LV12816LL-12T IS61LV12816LL-12BI IS61LV12816LL-12TI IS61LV12816LL-12LQI
Description 128k x 16 HIGH-SPEED CMOS static ram WITH 3.3V SUPPLY 128k x 16 STANDARD Sram, 12 ns, PQFP44
128k x 16 HIGH-SPEED CMOS static ram WITH 3.3V SUPPLY 128k x 16 STANDARD Sram, 12 ns, PDSO44
File Size 104.70K  /  16 Page

View it Online

Download Datasheet
    K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C1A-C20 K6R1008C1A-I12 K6R1008C1A-I15 K6R1008C1A-I20 K6R1008C1A-TC20 K6

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C1A-C20 K6R1008C1A-I12 K6R1008C1A-I15 K6R1008C1A-I20 K6R1008C1A-TC20 K6R1008C1A-TI20 K6R1008C1A-JC15 K6R1008C1A-JI15 K6R1008C1A-JI20 K6R1008C1A-TC12 K6R1008C1A-TI12 K6R1008C1A-TI15
Description 128k x 8 high speed static ram, 5V operating, 12ns
128kx8 High Speed static ram5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128kx8高速静态内存（5V工作），旋转引脚输出。在商用和工业温度范围操
128kx8 High Speed static ram5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
128k x 8 high speed static ram, 5V operating, 20ns
128k x 8 high speed static ram, 5V operating, 15ns
File Size 167.22K  /  8 Page

View it Online

Download Datasheet
    Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
Part No. 62C1024L IS62C1024L IS62C1024L-35Q IS62C1024L-35TI IS62C1024L-35QI IS62C1024L-70Q IS62C1024L-70QI IS62C1024L-70TI
Description 128k x 8 LOW POWER CMOS static ram
20 AMP MINIATURE AUTOMOTIVE RELAY, SINGLE OR DUAL 128k x 8 STANDARD Sram, 35 ns, PDSO32
File Size 65.16K  /  11 Page

View it Online

Download Datasheet
    Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
Part No. IS61LPS25618A-250B2 IS61LPS25618A-250B2I IS61LPS25618A-250B3 IS61LPS25618A-250B3I IS61LPS25618A-250TQ IS61LPS25618A-250TQI IS64VPS25618A IS64VPS12832A-200TQA3 IS64VPS25618A-200TQA3 IS64VPS12836A IS64VPS12836A-200TQA3 IS61LPS25618A-200B3I IS64LPS25618A-200TQA3 IS64LPS12836A-200TQA3 IS64LPS12832A-200TQA3 IS61LPS12832A-200B3 IS61LPS12832A-200B3I IS61LPS12832A-200B2I IS61LPS12836A-200B3 IS61LPS12836A-200B3I IS61LPS12836A-200B2 IS61LPS12836A-200B2I IS61LPS12832A-250TQ IS61LPS12836A-250TQI IS61LPS12836A-250B2 IS61LPS12832A-200TQLI IS61LPS12832A-200TQI IS61LPS25618A-200B2I
Description 128k x 32, 128k x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT static ram 128k x 32 CACHE Sram, 2.6 ns, PQFP100
128k x 32, 128k x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT static ram 128k x 36 CACHE Sram, 2.6 ns, PQFP100
128k x 32, 128k x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT static ram 128k x 36 CACHE Sram, 2.6 ns, PBGA119
128k x 32, 128k x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT static ram 128k x 32 CACHE Sram, 3.1 ns, PQFP100
File Size 168.00K  /  26 Page

View it Online

Download Datasheet
    IDT72V2103L10PF IDT72V2113L10PFI IDT72V2113L7-5BCI IDT72V2113L7-5PF IDT72V2103L7-5BC IDT72V2103L7-5BCI IDT72V2103L7-5PF

Integrated Device Technology, Inc.
Part No. IDT72V2103L10PF IDT72V2113L10PFI IDT72V2113L7-5BCI IDT72V2113L7-5PF IDT72V2103L7-5BC IDT72V2103L7-5BCI IDT72V2103L7-5PF IDT72V2113L7-5PFI IDT72V2113L6BCI IDT72V2113L6PFI IDT72V2113L5BCI IDT72V2113L5PFI IDT72V2103L5PF IDT72V2103L15PF
Description 3.3 VOLT HIGH-density SUPERSYNC II NARROW BUS FIFO 128k x 18 OTHER FIFO, 10 ns, PQFP80
3.3 VOLT HIGH-density SUPERSYNC II NARROW BUS FIFO 128k x 18 OTHER FIFO, 6.5 ns, PQFP80
3.3 VOLT HIGH-density SUPERSYNC II NARROW BUS FIFO 3.3伏高密度SUPERSYNC二窄总线先进先出
Octal bus transceiver/register (3-State) - Description: Transceiver/Register (3-State) ; Fmax: 350 MHz; Logic switching levels: TTL ; Number of pins: 24 ; Output drive capability: -32/ 64 mA ; Propagation delay: 4.4 ns; Voltage: 4.5-5.5 V
File Size 453.78K  /  46 Page

View it Online

Download Datasheet
    Integrated Device Technology, Inc.
Part No. IDT70V639S10BFI IDT70V639S15BF IDT70V639S12BFI IDT70V639S10PRFI IDT70V639S12PRFI
Description HIGH-SPEED 3.3V 128k x 18 ASYNCHRONOUS DUAL-PORT static ram 高.3 128k的18 ASYNCHRONO美国双端口静态ram
HIGH-SPEED 3.3V 128k x 18 ASYNCHRONOUS DUAL-PORT static ram 128k x 18 DUAL-PORT Sram, 15 ns, PBGA208
HIGH-SPEED 3.3V 128k x 18 ASYNCHRONOUS DUAL-PORT static ram 128k x 18 DUAL-PORT Sram, 12 ns, PBGA208
HIGH-SPEED 3.3V 128k x 18 ASYNCHRONOUS DUAL-PORT static ram 128k x 18 DUAL-PORT Sram, 12 ns, PQFP128
File Size 189.51K  /  23 Page

View it Online

Download Datasheet
    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024V1D-HC10 K6R3024V1D-HC12 K6R3024V1D-HI09 K6R3024V1D-HI10
Description From old datasheet system
128k x 24 Bit High-Speed CMOS static ram(3.3V Operating) 128k的24位高速CMOS静态ram.3V的工作）
128k x 24 MULTI DEVICE Sram MODULE, 10 ns, PBGA119
File Size 171.26K  /  9 Page

View it Online

Download Datasheet
    IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI IC62LV1024ALL-45H IC62LV1024ALL-45HI IC62LV1024ALL-45Q IC62LV1024ALL-4

ICSI[Integrated Circuit Solution Inc]
Part No. IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI IC62LV1024ALL-45H IC62LV1024ALL-45HI IC62LV1024ALL-45Q IC62LV1024ALL-45QI IC62LV1024ALL-45T IC62LV1024ALL-45TI IC62LV1024ALL-70TI IC62LV1024AL-45B IC62LV1024AL-45BI IC62LV1024AL-45H IC62LV1024AL-45HI IC62LV1024AL-45Q IC62LV1024AL-45QI IC62LV1024AL-45T IC62LV1024AL-45TI IC62LV1024AL-55B IC62LV1024AL-55BI IC62LV1024AL-55H IC62LV1024AL-55HI IC62LV1024AL-55Q IC62LV1024AL-55QI IC62LV1024AL-55T IC62LV1024AL-55TI IC62LV1024AL-70B IC62LV1024AL-70BI IC62LV1024AL-70H IC62LV1024AL-70HI IC62LV1024AL-70Q IC62LV1024AL-70QI IC62LV1024AL-70T IC62LV1024AL-70TI IC62LV1024ALL IC62LV1024ALL-55B IC62LV1024ALL-55BI IC62LV1024ALL-55H IC62LV1024ALL-55HI IC62LV1024ALL-55Q IC62LV1024ALL-55QI IC62LV1024ALL-55T IC62LV1024ALL-55TI IC62LV1024ALL-70B IC62LV1024ALL-70BI IC62LV1024ALL-70H IC62LV1024ALL-70HI IC62LV1024ALL-70Q IC62LV1024ALL-70QI IC62LV1024ALL-70T IC62LV1024AL-LL IC62LV1024LL-55Q IC62LV1024LL-70QI
Description 70ns; 2.7-3.3V; 128k x 8 low-power and low Vcc CMOS static ram
ASYNCHRONOUS static ram, Low Power A.Sram
128k x 8 Ultra Low Power and Low VCC Sram
From old datasheet system
55ns; 2.7-3.3V; 128k x 8 low-power and low Vcc CMOS static ram
File Size 118.06K  /  11 Page

View it Online

Download Datasheet

For 128k x 8 static ram density 1 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲
 




Price and Availability
 
Price & Availability of 128k x 8 static ram density 1

All Rights Reserved © IC-ON-LINE 2003 - 2022  
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]
 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.75971794128418