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Data Delay Devices Inc
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| Part No. |
2020-900 2020-1400 2021-200 2021-250 2020-700 2021-700 2021-100 2021-150 2021-500 2020-1300
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| OCR Text |
...eries 2021 .100 .100 .142 max. .150 max. 2001 data delay devices data delay devices, inc. 3 2 6 7 1 g in out g 8 3 g g 2020-xx xx = de...ohm signal divider (hp 35676 -66301) out r out a 50-ohm coax 50-ohm coax 50-ohm coax 50-ohm coax rf ... |
| Description |
Delay 900 /-18 ns, fixed SIP delay line Tr
Delay 1400 /-28 ns, fixed SIP delay line Tr
Delay 200 /-10 ns, fixed SIP delay line Tr
Delay 250 /-10 ns, fixed SIP delay line Tr
Delay 700 /-14 ns, fixed SIP delay line Tr
Delay 100 /-10 ns, fixed SIP delay line Tr
Delay 150 /-10 ns, fixed SIP delay line Tr
Delay 500 /-10 ns, fixed SIP delay line Tr
Delay 1300 /-26 ns, fixed SIP delay line Tr
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| File Size |
30.92K /
2 Page |
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SamHop Microelectronics...
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| Part No. |
SP8007
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| OCR Text |
150 i d units parameter 24 27 81 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v ds...ohm v gs =4.5v , i d =13.5a r ds(on) drain-source on-state resistance i dss ua gate threshold volta... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
112.50K /
8 Page |
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SamHop Microelectronics...
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| Part No. |
SP8006
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| OCR Text |
150 i d units parameter 24 12.5 81 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v ...ohm v gs =4.5v , i d =6.25a r ds(on) drain-source on-state resistance i dss ua gate threshold volta... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
111.81K /
8 Page |
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it Online |
Download Datasheet |
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Electrochem
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| Part No. |
3B1065
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| OCR Text |
...l o w as -20 o c and up to +150 o c ? lo w sel f disc har g e rate (3% per year at 25 o c) ? r estricted for transpo r tation (class...ohm 75 ohm 20 ohm r e v . 0002 10000 w ehr le dr i v e , clar enc e , n y 14031 usa p... |
| Description |
HIGH RATE LITHIUM CELL
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| File Size |
278.37K /
1 Page |
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SamHop
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| Part No. |
SP2013
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| OCR Text |
150 i d units parameter -20 -8.5 -49 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary ...ohm v gs =-4.5v , i d =-4.25a r ds(on) drain-source on-state resistance i dss ua gate threshold vol... |
| Description |
P-Channel Enhancement Mode Field Effect Transistor
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| File Size |
111.64K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STA6968
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| OCR Text |
...ure r ange t j , t s t g -55 to 150 c t he r mal c har ac t e r is t ic s t hermal r es is tance, j unction-to-ambient 41.5 /w c a a a a b 6...ohm ns ns ns ns total g ate c harge g ate-s ource c harge g ate-drain c harge q g q gs q gd v ds =48... |
| Description |
S uper high dense cell design for low R DS (ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
114.71K /
6 Page |
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it Online |
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SamHop Microelectronics
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| Part No. |
STA6610
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| OCR Text |
...ure r ange t j , t s t g -55 to 150 c a a a b 25 c 70 c t a= 25 c t a=70 c a n-channel 1.7 20 7.6 30 3 30 6 2 s urface mount p ackage. f e a...ohm, v g s = 10v, r g e n = 6 ohm ns ns ns ns total g ate c harge g ate-s ource c harge g ate-drain ... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
115.79K /
6 Page |
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it Online |
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SamHop Microelectronics
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| Part No. |
STT3418
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| OCR Text |
...without notice. w p d c -55 to 150 t a =25 c maximum power dissipation operating junction and storage temperature range t j , t stg t a =...ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
130.74K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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