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  16-ch Datasheet PDF File

For 16-ch Found Datasheets File :: 22263    Search Time::1.453ms    
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    2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00

NEC[NEC]
Part No. 2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text ...V di/dt = 50 A / s 1210 520 180 16 140 90 80 42 8.0 10 1.0 125 280 -1.0 5.0 MIN. TYP. 70 120 -1.5 12 -10 # 10 MAX. 100 185 -2.0 UNIT ...ch-a)= 83.3 C/W 10 Rth(ch-c)= 1.79 C/W 1 0.1 0.01 Single Pulse 0.001 10 100 1m 10 m 100 m ...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 70.31K  /  8 Page

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    2SJ493 D11265EJ3V0DS00

NEC[NEC]
Part No. 2SJ493 D11265EJ3V0DS00
OCR Text ...V A A W W C C A mJ -20, 0 # 16 # 64 Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage...ch-C) Rth(ch-A) 4.17 62.5 C/W C/W The information in this document is subject to change without n...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 64.87K  /  8 Page

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    NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTHD3100CT3G

ON Semiconductor
Part No. NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTHD3100CT3G
OCR Text ...mW V VGS = 0 V VGS = 0 V, VDS = 16 V VGS = 0 V, VDS = -16 V VGS = 0 V, VDS = 16 V VGS = 0 V, VDS = -16 V ID = 250 mA ID = -250 mA TJ = 25 C TJ = 125 C 20 -20 1.0 -1.0 5.0 -5.0 100 100 nA mA V Symbol N/P Test Conditions Min Typ Max Unit V...
Description Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET&#8482;; Package: ChipFET&trade;; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET)
Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET

File Size 141.04K  /  8 Page

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    2SJ496

HITACHI[Hitachi Semiconductor]
Part No. 2SJ496
OCR Text ...-1.0 65 Max -- -- -10 10 -2.0 0.16 0.24 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I D = -5A, VGS = 0 I F = ...ch - a(t) = s (t) * ch - a ch - a = 139 C/W, Ta = 25 C PDM PW T D= PW T 0.003 1sh ...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 49.68K  /  10 Page

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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text ... Typ -- -- -- -- -- 0.042 0.065 16 1750 800 180 16 100 230 140 -1.0 100 Max -- -- -10 10 -2.0 0.055 0.095 -- -- -- -- -- -- -- -- -- -- Unit...ch - c(t) = s (t) * ch - c ch - c = 4.17C/W, Tc = 25C PDM PW T D= 0.03 PW T 0.01 10 ...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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    2SJ505 2SJ505L 2SJ505S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ505 2SJ505L 2SJ505S
OCR Text ...-8 -12 Drain to Source Voltage -16 -20 V DS (V) Typical Transfer Characteristics -100 V DS = -10 V Pulse Test 25 C -80 -60 Drain...ch - c(t) = s (t) * ch - c ch - c = 1.67 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu ...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 53.43K  /  10 Page

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    2SJ506 2SJ506L 2SJ506S

Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ506 2SJ506L 2SJ506S
OCR Text ...-- -- Typ -- -- -- -- -- 65 110 16 660 440 140 12 65 85 65 -1.05 65 Max -- -- -10 10 -2.0 85 180 -- -- -- -- -- -- -- -- -- -- Unit V V A A ...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho ...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 49.71K  /  10 Page

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    2SJ526

HITACHI[Hitachi Semiconductor]
Part No. 2SJ526
OCR Text ...-- -- Typ -- -- -- -- -- 0.11 0.16 8 580 300 85 10 55 85 60 -1.2 60 Max -- -- -10 10 -2.0 0.15 0.23 -- -- -- -- -- -- -- -- -- -- Unit V V A...ch - c(t) = s (t) * ch - c ch - c = 5.0C/W, Tc = 25C PDM PW T D= 0.03 PW T 0.01 10 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.48K  /  9 Page

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    2SJ527 2SJ527L 2SJ527S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ527 2SJ527L 2SJ527S
OCR Text ... -12 Gate to Source Voltage -16 -20 V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( ) Fo...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho ...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 53.03K  /  9 Page

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    2SJ528 2SJ528L 2SJ528S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ528 2SJ528L 2SJ528S
OCR Text ... -12 Gate to Source Voltage -16 -20 V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( ) Fo...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.33K  /  9 Page

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For 16-ch Found Datasheets File :: 22263    Search Time::1.453ms    
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