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  16mx4 Datasheet PDF File

For 16mx4 Found Datasheets File :: 133    Search Time::1.188ms    
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    IBM Microeletronics
Part No. IBM13M16734BCD
OCR Text ...y array. the dimm uses eighteen 16mx4 sdrams in 400 mil tsop packages. the dimm achieves high- speed data-transfer rates of up to 100 mhz by employing a prefetch/pipeline hybrid architecture that synchronizes the output data to a system clo...
Description 16M x 72 1 Bank Registered/Buffered SDRAM Module(16M x 72 1组寄缓冲同步动态RAM模块)

File Size 143.42K  /  20 Page

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    Infineon
Part No. HYS64V4000GD-10 HYS64V8000GD-10 HYS64V1600GCD-10 HYS64V1620GCD-10
OCR Text ...8 4k 8 8Mx8 12 BA0, BA1 9 4k 16 16mx4 12 BA0,BA1 10 4k 16 8M x 8 12 BA0,BA1 9 4k Period 64 ms 64 ms 64 ms 64 ms 64 ms 2M x 64 4M x 64 8M x 64 16M x 64 16M x 64 HYS64V2000GD-10 HYS64V4000GD-10 HYS64V8000G(C)D-10 HYS64V1600GCD-10 HYS64V...
Description 32 MB PC66 2-2-2 SO-DIMM Module
64 MB PC66 2-2-2 SO-DIMM Module
128 MB PC66 2-2-2 SO-DIMM Module

File Size 217.20K  /  19 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4E660412E-JI45 K4E640412E-JP45 K4E660412E-JI60 K4E640412E-JP50 K4E640412E-JI45 K4E640412E-JI60 K4E640412E-JI50 K4E640412E-JP60 K4E660412E-JI50 K4E660412E-JP50 K4E660412E-JP45 K4E660412E-TI60 K4E640412E-TI45 K4E660412E-TI45 K4E640412E-TI60 K4E640412E-TI50 K4E660412E-JP60 K4E660412E-TI50 K4E640412E-TP50 K4E640412E-TP60 K4E660412E-TP45 K4E660412E-TP50 K4E640412E-TP45
OCR Text ...is available in L-version. This 16mx4 EDO Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES * Part Identification - K4E660412E-JI/P(3.3V,...
Description Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 33uF; Voltage: 100V; Case Size: 10x25 mm; Packaging: Bulk
CONNECTOR ACCESSORY
16M x 4bit CMOS Dynamic RAM with Extended Data Out 16米x 4位的CMOS动态随机存储器的扩展数据输

File Size 196.05K  /  21 Page

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    Samsung Electronic
Part No. M390S1620DT1
OCR Text 16mx4 *18 ? used component part # : k4s640432d-tc75 ? # of rows in module : 1 row ? # of banks in component : 4 banks ? feature : 1,700mil height & double sided ? refresh : 4k/64ms ? contents ; m390s1620dt1-c75 byte # fu...
Description 16Mx72 SDRAM DIMM with PLL & Register based on 16mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD Data Sheet

File Size 17.34K  /  2 Page

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    KMM53232000BK KMM53232000BKG

Samsung semiconductor
Part No. KMM53232000BK KMM53232000BKG
OCR Text 16mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53232000B is a 32Mx32bits Dynamic RAM high density memory module. The Samsung KMM53232000B consists of sixteen CMOS 16mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy s...
Description 32M x 32 DRAM SIMM Using 16mx4, 4K Refresh, 5V

File Size 371.59K  /  18 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. M374F3200DJ1-C M374F3280DJ1-C
OCR Text 16mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION The Samsung M374F320(8)0DJ1-C is a 32Mx72bits Dynamic RAM high density memory module. The Samsung M374F320(8)0DJ1-C consists of thirty-six CMOS 16mx4bits DRAMs in SOJ 400mil packages and on...
Description 32M x 72 DRAM DIMM with ECC Using 16mx4, 4K & 8K Refresh, 3.3V

File Size 331.11K  /  20 Page

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    KMM53232004BK KMM53232004BKG

Samsung semiconductor
Part No. KMM53232004BK KMM53232004BKG
OCR Text 16mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53232004B is a 32Mx32bits Dynamic RAM high density memory module. The Samsung KMM53232004B consists of sixteen CMOS 16mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy s...
Description 32M x 32 DRAM SIMM Using 16mx4, 4K Refresh, 5V

File Size 416.12K  /  19 Page

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    KMM53216004BK KMM53216004BKG

SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM53216004BK KMM53216004BKG
OCR Text 16mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53216004B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216004B consists of eight CMOS 16mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy sub...
Description 16M x 32 DRAM SIMM Using 16mx4, 4K Refresh, 5V

File Size 405.00K  /  19 Page

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    KMM53216000BK KMM53216000BKG

Samsung semiconductor
Part No. KMM53216000BK KMM53216000BKG
OCR Text 16mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53216000B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216000B consists of eight CMOS 16mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy sub...
Description 16M x 32 DRAM SIMM Using 16mx4, 4K Refresh, 5V

File Size 360.29K  /  18 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH16S72AMA-8 MH16S72AMA-10 MH16S72AMA-12 MH16S72AMA
OCR Text ...s of eighteen industry standard 16mx4 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP. The mounting of TSOP on a card edge Dual Inline package provides any application where high densities and large quantities of memory...
Description From old datasheet system
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM

File Size 1,042.58K  /  52 Page

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For 16mx4 Found Datasheets File :: 133    Search Time::1.188ms    
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