| |
|
 |
Sanyo Semicon Device
|
| Part No. |
MCH6422
|
| OCR Text |
...=0V VDS=10V, ID=1mA VDS=10V, ID=1a ID=1a, VGS=4V ID=0.5A, VGS=2.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circui...30v, VGS=4V, ID=2A VDS=30v, VGS=4V, ID=2A VDS=30v, VGS=4V, ID=2A IS=2A, VGS=0V Ratings min typ 4.2 1... |
| Description |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
| File Size |
32.81K /
4 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
ZETEX[Zetex Semiconductors]
|
| Part No. |
ZXMHC3A01T8 ZXMHC3A01T8TC ZXMHC3A01T8TA
|
| OCR Text |
1a P-Channel = V(BR)DSS= -30v : RDS(on)= 0.21 ; ID= -2.3A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes the... |
| Description |
COMPLEMENTARY 30v ENHANCEMENT MODE MOSFET H-BRIDGE
From old datasheet system
|
| File Size |
277.20K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
Weitron Technology
|
| Part No. |
WTC2310
|
| OCR Text |
... Delay Time2 VDS=30v,VGS=10V,ID=1a,RD=30,RG=3.3 Rise Time VDS=30v,VGS=10V,ID=1a,RD=30,RG=3.3 Turn-off Delay Time VDS=30v,VGS=10V,ID=1a,RD=30,RG=3.3 Fall Time VDS=30v,VGS=10V,ID=1a,RD=30,RG=3.3 Total Gate Charge2 VDS=48V,VGS=4.5V,ID=3A Gate-... |
| Description |
N-Channel Enhancement Mode Power MOSFET
|
| File Size |
642.18K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
Sanyo Semicon Device
|
| Part No. |
ECH8619
|
| OCR Text |
...S=--10V, ID=-1mA VDS=--10V, ID=-1a ID=--1a, VGS=--10V ID=--0.5A, VGS=-4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified...30v, VGS=-10V, ID=--2A VDS=--30v, VGS=-10V, ID=--2A VDS=--30v, VGS=-10V, ID=--2A IS=--2A, VGS=0V --6... |
| Description |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
| File Size |
66.15K /
6 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
