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  2.3-3.6v Datasheet PDF File

For 2.3-3.6v Found Datasheets File :: 74502    Search Time::2ms    
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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FX3ASJ-3
OCR Text ... OUTLINE DRAWING 6.5 5.0 0.2 4 Dimensions in mm 5.5 0.2 1.5 0.2 0.5 0.1 1.0 max 2.3 min 10 max 1.0 A 0.5 0.2 0.8 0.9 max 2.3 2.3 2.3 1 2 3 3 * 4V DRIVE * VDSS ......................
Description HIGH-SPEED SWITCHING USE

File Size 43.83K  /  4 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FX3ASJ-3
OCR Text ... OUTLINE DRAWING 6.5 5.0 0.2 4 Dimensions in mm 5.5 0.2 1.5 0.2 0.5 0.1 1.0 max 2.3 min 10 max 1.0 A 0.5 0.2 0.8 0.9 max 2.3 2.3 2.3 1 2 3 3 * 4V DRIVE * VDSS ......................
Description MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 48.96K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FX6ASJ-3
OCR Text ... OUTLINE DRAWING 6.5 5.0 0.2 4 Dimensions in mm 5.5 0.2 1.5 0.2 0.5 0.1 1.0 max 2.3 min 10 max 1.0 A 0.5 0.2 0.8 0.9 max 2.3 2.3 2.3 1 2 3 3 * 4V DRIVE * VDSS ......................
Description HIGH-SPEED SWITCHING USE

File Size 43.54K  /  4 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FX6ASJ-3
OCR Text ... OUTLINE DRAWING 6.5 5.0 0.2 4 Dimensions in mm 5.5 0.2 1.5 0.2 0.5 0.1 1.0 max 2.3 min 10 max 1.0 A 0.5 0.2 0.8 0.9 max 2.3 2.3 2.3 1 2 3 3 * 4V DRIVE * VDSS ......................
Description MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 48.70K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FX6KMJ-3
OCR Text ...3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 E 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 1 GATE 2 DRAIN 3 SOURCE 1 23 * 4V DRIVE * VDSS ...........
Description HIGH-SPEED SWITCHING USE

File Size 49.43K  /  4 Page

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    LA1E109-3-4D2LF

Bothhand USA, LP.
Part No. LA1E109-3-4D2LF
OCR Text ... P/N:LA1E109-3-4D2 LF Page : 1/2 Feature l l l l l l RJ-45 needs to be matched FCC standard Isolation @ 60Hz: Input to output:1500Vrms. Comply with RoHS requirements-whole part No Cd, No Hg, No Cr6+, No PBB and PBDE and No Pb on externa...
Description SINGLE RJ45 CONNECTOR MODULE WITH INTEGRATED 1000 BASE-T MAGNETICS AND LEDS

File Size 172.51K  /  2 Page

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    FS10KM-3

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS10KM-3
OCR Text ...3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 f 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 E 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 123 2.6 0.2 10V DRIVE VDSS ................................
Description HIGH-SPEED SWITCHING USE

File Size 39.88K  /  4 Page

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    FS50SM-3 FS50SM-3-A8

Renesas Electronics Corporation
Part No. FS50SM-3 FS50SM-3-A8
OCR Text 2.00 Aug 07, 2006 Features * * * * * Drive voltage : 10 V VDSS : 150 V rDS(ON) (max) : 31 m ID : 50 A Integrated Fast Recovery Diode (TY...3. 4. Gate Drain Source Drain 2 3 3 Applications Motor control, Lamp control, Solenoid ...
Description High-Speed Switching Use Nch Power MOS FET
   High-Speed Switching Use Nch Power MOS FET

File Size 167.66K  /  7 Page

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    FX20KMJ-3-A8

Renesas Electronics Corporation
Part No. FX20KMJ-3-A8
OCR Text 2.00 Aug 07, 2006 Features * * * * * * Drive voltage : 4 V VDSS : -150 V rDS(ON) (max) : 0.29 ID : -20 A Integrated Fast Recovery Diode...3 1 1. Gate 2. Drain 3. Source 1 2 3 2 Applications Motor control, Lamp contro...
Description High-Speed Switching Use Pch Power MOS FET

File Size 167.82K  /  7 Page

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    FS30UM-3

Mitsubishi Electric Semiconductor
Part No. FS30UM-3
OCR Text 2 Dimensions in mm r 5.5 0.2 1.5 0.2 0.5 0.1 1.0MAX. 2.3MIN. 10MAX. 1.0 A 0.5 0.2 0.8 0.9MAX. 2.3 2.3 2.3 q w e wr q GATE w DRAIN e SOURCE r DRAIN e 4V DRIVE VDSS ..................
Description HIGH-SPEED SWITCHING USE

File Size 42.53K  /  4 Page

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For 2.3-3.6v Found Datasheets File :: 74502    Search Time::2ms    
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