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39.0v Datasheet PDF File

For 39.0v Found Datasheets File :: 33106 Search Time::3.782ms
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				IRF[International Rectifier]
Part No.	IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text	..., 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 23799...
Description	TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) CAP CER 250VAC 82PF 5% SL 1808 6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	148.64K / 7 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited International Rectifier SEME-LAB[Seme LAB]
Part No.	IRF9240 IRF9240-SMD
OCR Text	...POWER MOSFET D 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655...0V , ID = -250mA VDS = VGS , ID = -250mA VGS = -20V VGS = 20V VDS = Max. Rating , VGS = 0V IDSS VDS ...
Description	CAP CER 250VAC 150PF X7R 1808 P-CHANNEL POWER MOSFET
File Size	25.33K / 2 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text	... 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) MINIMUM RECO MM ENDED F OO TP RINT 11.43 (.450) NO TE S: 1 DIM ENS IO NS AF T ER S OLDE R DIP . 2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982. 3 CO NT RO LLING DIME NS...
Description	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXFET? Power MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	357.87K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text	... 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) MINIMUM RECO MM ENDED F OO TP RINT 11.43 (.450) NO TE S: 1 DIM ENS IO NS AF T ER S OLDE R DIP . 2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982. 3 CO NT RO LLING DIME NS...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
File Size	307.08K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text	... 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) MINIMUM RECO MM ENDED F OO TP RINT 11.43 (.450) NO TE S: 1 DIM ENS IO NS AF T ER S OLDE R DIP . 2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982. 3 CO NT RO LLING DIME NS...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
File Size	330.76K / 10 Page	View it Online	Download Datasheet

				ISSI[Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc]
Part No.	IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T IS42S16100C1-7TI IS42S16100C1-7TL IS42S16100C1-7TLI
OCR Text	...0 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 GND DQ15 IDQ14 GNDQ DQ13 DQ12 VDDQ DQ11 DQ10 GNDQ DQ9 DQ8 VDDQ NC ...0V with a pulse width 3 ns. 4 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-...
Description	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
File Size	750.59K / 79 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text	...3 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 X8 N.C N.C N.C N.C I/O7 I/O6 I/O5 I/O4 N.C N.C LOCKPRE Vcc ...0V for periods <30ns. Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	679.73K / 42 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text	...3 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 N.C N.C N.C N.C I/O7 I/O6 I/O5 I/O4 N.C N.C N.C Vcc Vss N.C N.C...0V for periods <30ns. Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions...
Description	32M x 8 Bit NAND Flash Memory
File Size	607.24K / 29 Page	View it Online	Download Datasheet

				ST Microelectronics SGS Thomson Microelectronics STMicroelectronics
Part No.	LM339P LM139A LM139D LM239P LM139P LM339A LM239A
OCR Text	...D E e e3 F i L Z Min. 0.51 1.39 Millimeters Typ. Max. 1.65 Min. 0.020 0.055 Inches Typ. Max. 0.065 0.5 0.25 20 8.5 2.54 15.24 7.1 5.1 3.3 1.27 2.54 0.050 0.020 0.010 0.787 0.335 0.100 0.600 0.280 0.201 0.130 0.100 D...
Description	LOWPOWER QUAD VOLTAGE COMPARATORS
File Size	90.85K / 10 Page	View it Online	Download Datasheet

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