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For 3mh Found Datasheets File :: 1010 Search Time::1.531ms
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				GOOD-ARK Electronics
Part No.	SSF5508A-15
OCR Text	...le pulse avalanche energy @ l=0.3mh 634 mj iar avalanche current @ l=0.3mh 65 a tj tstg operating junction and storage temperature range -55 to + 175 c thermal resistance symbol characterizes value unit r jc jun...
Description	55V N-Channel MOSFET
File Size	712.28K / 6 Page	View it Online	Download Datasheet

				GOOD-ARK Electronics
Part No.	SSF5508D-15
OCR Text	...le pulse avalanche energy @ l=0.3mh 735 mj iar avalanche current @ l=0.3mh 65 a tj tstg operating junction and storage temperature range -55 to + 150 c thermal resistance symbol characterizes value unit r jc jun...
Description	Preliminary
File Size	821.05K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDD8424H
OCR Text	... Starting TJ = 25C, N-ch: L = 0.3mh, IAS = 14A, VDD = 40V, VGS = 10V; P-ch: L = 0.3mh, IAS = -15A, VDD = -40V, VGS = -10V. (c)2007 Fairchild Semiconductor Corporation FDD8424H Rev.C 3 www.fairchildsemi.com FDD8424H Dual N & P-C...
Description	Dual N & P-Channel PowerTrench MOSFET
File Size	619.91K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF530N
OCR Text	... Fig. 5 93 mJ IAS = 9.0A, L = 2.3mh D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Revers...
Description	Power MOSFET(Vdss=100V, Rds(on)=90mohm, Id=17A) HEXFET Power MOSFET
File Size	152.22K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDD8424H
OCR Text	... Starting TJ = 25C, N-ch: L = 0.3mh, IAS = 14A, VDD = 40V, VGS = 10V; P-ch: L = 0.3mh, IAS = -15A, VDD = -40V, VGS = -10V. (c)2007 Fairchild Semiconductor Corporation FDD8424H Rev.C 3 www.fairchildsemi.com FDD8424H Dual N & P-C...
Description	Dual N & P-Channel PowerTrench? MOSFET
File Size	581.01K / 12 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	DMG4932LSD DMG4932LSD-13
OCR Text	...nche Energy (Notes 4 & 5) L = 0.3mh IAR EAR Maximum Ratings - Q2 @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25C TA = 85C Symbol VD...
Description	ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
File Size	195.87K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDD3510H
OCR Text	...3. Starting TJ = 25C, N-ch: L = 3mh, IAS = 5A, VDD = 80V, VGS = 10V; P-ch: L = 3mh, IAS = -6A, VDD = -80V, VGS = -10V. FDD3510H Rev.C 3 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench(R) MOSFET Typical Characte...
Description	Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mOHM P-Channel: -80V, -9.4A, 190mOHM
File Size	424.11K / 10 Page	View it Online	Download Datasheet

				Silikron Semiconductor ...
Part No.	SSF5508U
OCR Text	...le pulse avalanche energy @ l=0.3mh 375 mj i ar avalanche current @ l=0.3mh 50 a t j t stg operating junction and storage te mperature range -55 to + 175 c v dss 55v r ds (on) 4.5mohm(typ.) i d 110a to220 ? marking ...
Description	Advanced trench MOSFET process technology
File Size	405.55K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP
Part No.	FDS8958A10 FDS8958A FDS8958AF085
OCR Text	... 2.0% 3. Starting TJ = 25C, L = 3mh, IAS = 6A, VDD = 30V, VGS = 10V (Q1). Starting TJ = 25C, L = 3mh, IAS = 3A, VDD = 30V, VGS = 10V (Q2). FDS8958A_F085 Rev. A 3 www.fairchildsemi.com FDS8958A_F085 Dual N & P-Channel PowerTrench...
Description	30V Dual N & P-Channel PowerTrenchMOSFET Dual N & P-Channel PowerTrench MOSFET 7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
File Size	745.80K / 8 Page	View it Online	Download Datasheet

For 3mh Found Datasheets File :: 1010 Search Time::1.531ms
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