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				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S1G0732BNBSP K4S1G0732B-TC75 K4S1G0732B
OCR Text	...ed 1Gb B-die (x8) 32M x 8Bit x 4 Banks Synchronous DRAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatible with multiplexed address * Four banks operation * MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst ...
Description	SDRAM stacked 1Gb B-die
File Size	124.59K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD32AD KM418RD32C KM418RD32D KM418RD4AC KM418RD4AD KM418RD4C KM418RD4D KM418RD8ACD-RK70 KM418RD8ACD-RK80 KM418RD8AD KM418RD8C KM418RD32AC KM418RD8AC KM418RD8ACD-RG60 KM418RD8D KM418RD2D KM416RD8D KM416RD16AC KM416RD16AD KM416RD16C KM416RD16D KM416RD2AC KM416RD2AD KM416RD2C KM416RD2D KM416RD32AC KM416RD32AD KM416RD32C KM416RD32D KM416RD4AC KM416RD4AD KM416RD4C KM416RD4D KM416RD8AC_D-RK70 KM416RD8AC_D-RK80 KM416RD8AC_DB-RCG60 KM416RD8AD KM416RD8C KM416RD8ACD-RK80 KM416RD8ACDB-RCG60 KM416RD8ACD-RK70 KM416RD8AC-RK70 KM416RD8AD-RK70 KM418RD8AC-RK70 KM418RD8AD-RK70 KM418RD8AC-RK80 KM418RD16AD
OCR Text	...D) ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 Direct RDRAMTM KM 4 XX XX XX X X - X X XX SAMSUNG Memory Device Organization Product...32m/8K, 3.9us) -L : Low Power Self Refesh(32m/8K, 3.9us) -R : Normal Power Self Refesh(32m/16K, 1.9u...
Description	128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
File Size	4,041.48K / 64 Page	View it Online	Download Datasheet

				Linear Technology
Part No.	LTC1540 LTC1540IS8 LTC1540CS8 1540F LTC1540CMS8 LTC1540I LTC1540C
OCR Text	...ly Current vs Temperature R1 4.32m 1% R2 3M 1% 7 V 3 IN + + LTC1540 SUPPLY CURRENT (A) 0.45 0.40 0.35 0.30 0.25 0.20 V + = 5V V - = GND = 0V + 8 OUT 4 IN- - 5 HYST 6 REF V- 2 GND 1 1540 * TA01 0.15...
Description	Nanopower Comparator with Reference From old datasheet system
File Size	246.37K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1208U0C K9K1208Q0C K9K1216D0C K9K1216Q0C K9K1216U0C K9K1208D0C
OCR Text	...e - below about 1.1V. (Page 35) 4. Add the specification of Block Lock scheme.(Page 29~32) 5. Pin assignment of TBGA A3 ball is changed. (be...32M x 16 Bit NAND Flash Memory Revision History Revision No. History 2.6 1. tREA value of 1.8V ...
Description	64M x 8 Bit / 32M x 16 Bit NAND Flash Memory 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
File Size	806.29K / 39 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G16Q0A
OCR Text	... NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass sto...32M Bit NAND Flash ARRAY A0 - A7 (512 + 16)Byte x 262,144 Page Register & S/A A8 Command C...
Description	128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
File Size	902.07K / 43 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1G08U0B K9K1G08B0B K9K1G08R0B
OCR Text	...anged -1.7V~1.95V ->1.65V~1.95V 4. 2.7V device is added 5. Multi plane operation and Copy-Back Program are not supported with 1.8V device. ...32M Bit NAND Flash ARRAY A0 - A7 (512 + 16)Byte x 262,144 Page Register & S/A A8 Command C...
Description	128M x 8 Bit NAND Flash Memory
File Size	945.71K / 41 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1G08U0M-YCB0 K9K1G08U0M-YIB0
OCR Text	...n - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (512 + 16)bit x8bit multipled by eight planes * Automatic Program and Er...32M Bit NAND Flash ARRAY A0 - A7 (512 + 16)Byte x 262,144 Page Register & S/A A8 Command C...
Description	128M x 8 Bit NAND Flash Memory
File Size	465.75K / 37 Page	View it Online	Download Datasheet

				RENESAS
Part No.	M5M29KB_T3
OCR Text	...5M29KB/T331ATP 33,554,432-BIT (4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY M5M29KB/T331A...32M Flash Memory Block Diagram Vcc GND A0 to A20 CE# OE# WE# WP# RP# BYTE# 32Mbit DINOR IV...
Description	NOR type Flash Memory
File Size	261.27K / 32 Page	View it Online	Download Datasheet

				FUJITSU[Fujitsu Media Devices Limited]
Part No.	MB84VD22081EA-90-PBS MB84VD22082EA-90-PBS MB84VD22083EA-90-PBS MB84VD22084EA-90-PBS MB84VD22091EA-90-PBS MB84VD22092EA-90-PBS MB84VD22093EA-90-PBS MB84VD22094EA-90-PBS MB84VD22084EA MB84VD22081EA MB84VD22082EA MB84VD22083EA MB84VD2208XEA MB84VD22091EA MB84VD22092EA MB84VD22093EA MB84VD22094EA
OCR Text	...Sector erase architecture Eight 4 K words and sixty three 32 K words. Any combination of sectors can be concurrently erased. Also supports full chip erase. * Boot Code Sector Architecture MB84VD2208XEA: Top sector MB84VD2209XEA: Bottom sect...
Description	32M (X 8/X16) FLASH MEMORY & 2M (X 8/X16) STATIC RAM
File Size	217.55K / 61 Page	View it Online	Download Datasheet

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