5-1900 pdf Datasheet P8 Full Text Search --- IC-ON-LINE


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5-1900 Datasheet PDF File

For 5-1900 Found Datasheets File :: 7636 Search Time::1.5ms
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				Motorola, Inc
Part No.	MRF15030
OCR Text	...ird Order Intercept Point -- 53.5 dBm Typ @ 1490 MHz, VCE = 24 Vdc, IC = 2.5 Adc * Characterized with Series Equivalent Large-Signal Paramet...1900 1950 2000 \|S11\| 0.983 0.984 0.978 0.975 0.975 0.969 0.963 0.955 0.945 0.933 0.915 0.889 0.856 0...
Description	RF POWER TRANSISTOR
File Size	156.90K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF15060 MRF15060S
OCR Text	...(BR)EBO ICES 25 60 3 -- -- -- 3.5 -- -- -- -- 10 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 1 Adc, VCE = 5 Vdc) hFE 20 40...1900 1950 2000 S11 \|S11\| 0.964 0.958 0.957 0.956 0.955 0.953 0.941 0.922 0.920 0.901 0.903 0.906 0.9...
Description	RF POWER BIPOLAR TRANSISTORS
File Size	162.37K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF15090
OCR Text	...wer -- 90 Watts (PEP) Gain -- 7.5 dB Min @ 90 Watts (PEP) Collector Efficiency -- 30% Min @ 90 Watts (PEP) Intermodulation Distortion -- -28...1900 1950 2000 S11 \|S11\| 0.999 0.999 0.994 0.992 0.994 0.986 0.982 0.973 0.957 0.938 0.903 0.857 0.8...
Description	RF POWER TRANSISTOR
File Size	210.46K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18030A MRF18030ALR3 MRF18030ALSR3
OCR Text	... Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W Output Power * Excellent Thermal Stability * Low Gold Plating Thickness on Leads, 4...1900 -25 -30 1950 -20 Gps @ 15 W Gps @ 30 W 0 P out, OUTPUT POWER (WATTS) IRL, INPUT RETURN LOSS (dB...
Description	SEE A3282EUA-T CHOPPER STABILIZED LATCH W/TIN PLATING SEE A3282ELHLT-T RF Power Field Effect Transistors
File Size	504.66K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text	...VDSS VGS PD Tstg TJ Value 65 -0.5, +15 180 1.03 -65 to +150 200 Unit Vdc Vdc Watts W/C C C ESD PROTECTION CHARACTERISTICS Test Condition...1900 0 0 1 VDD = 26 Vdc IDQ = 500 mA f = 1880 MHz 2 3 4 Pin, INPUT POWER (WATTS) 5 6 h Pout 60 55...
Description	MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
File Size	399.98K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text	...DSS VGS PD Tstg TJ Value 65 - 0.5, +15 180 1.03 - 65 to +150 200 Unit Vdc Vdc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Therm...1900 1W 0.5 W VDD = 26 Vdc IDQ = 500 mA Pin = 6 W Pout , OUTPUT POWER (WATTS) 90 80 70 60 50 40 3...
Description	HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes RF Power Field Effect Transistors
File Size	486.59K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PMB2304 PMB2304R
OCR Text	...urrent consumption (typically 3.5 mA) High input sensitivity, high input frequencies (220 MHz) Large dividing ratios for small channel spaci...1900 Fast modulus switchover for 65-MHz operation Synchronous programming of the count...
Description	PLL-FREQUENCY SYNTHESIZER
File Size	1,333.62K / 33 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	ST3230C ST3230C12R0L ST3230C12R1 ST3230C12R1L ST3230C12R2 ST3230C12R2L ST3230C12R3 ST3230C12R3L
OCR Text	...% VDRM to 1000A gate drive 10V, 5, t = 0.5s r to 1A, TJ = TJ max. Gate drive 30V, 15, V = 67% VDRM, TJ = 25C d Maximum delay time 4.5 s Rise time 0.5s IT = 1000A, t = 1ms, TJ = TJ max, VRM = 50V, p t q Typical turn-o...
Description	PHASE CONTROL THYRISTORS Hockey Puk Version
File Size	134.31K / 6 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA803 UPA803T UPA803T-T1
OCR Text	...mm) FEATURES * High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) 0.65 0.65 2.10.1 1.250.1 1.3 Cob = 0.7 pF TYP. (@VCB ...1900.00 2000.00 2100.00 2200.00 2300.00 2400.00 2500.00 2600.00 2700.00 2800.00 2900.00 3000.00 S11 ...
Description	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
File Size	56.84K / 8 Page	View it Online	Download Datasheet

For 5-1900 Found Datasheets File :: 7636 Search Time::1.5ms
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