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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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| Part No. |
CLY2 Q62702-L96
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| OCR Text |
...POUT at VD=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 %
4 5 6
3 2
ESD:
Electrostatic discharge sensitive device, obser...25 0,2 0,15 0,1 0,05 0 0 1
PtotDC VGS=0V VGS=-0.5V VGS=-1V VGS=-1.5V VGS=-2V VGS=-2.5V
Draincurr... |
| Description |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) 砷化镓场效应管(功放为频率高千兆赫移动电话) From old datasheet system
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| File Size |
52.08K /
7 Page |
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