6 k h 8 p s pdf Datasheet P8 Full Text Search --- IC-ON-LINE


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6 k h 8 p s Datasheet PDF File

For 6 k h 8 p s Found Datasheets File :: 79786 Search Time::4.047ms
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				TOSHIBA
Part No.	TpCA8A04-h
OCR Text	... forward voltage: v dsf = ? 0.6 v (max) ? high-speed switching ? small gate charge: q sw = 13.4 nc (typ.) ? low drain-source on-r...k ) v dgr 30 v gate-source voltage v gss 20 v dc (note 1) i d 44 drain current pulsed (n...
Description	power MOsFET (N-ch single VDss≤30V)
File Size	216.05K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TpCA8A04-h
OCR Text	... forward voltage: v dsf = ? 0.6 v (max) ? high-speed switching ? small gate charge: q sw = 13.4 nc (typ.) ? low drain-source on-r...k ) v dgr 30 v gate-source voltage v gss 20 v dc (note 1) i d 44 drain current pulsed (n...
Description	TOshIBA Field Effect Transistor with Built-in schottky Barrier Diode
File Size	204.00K / 8 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TpCC8005-h
OCR Text	...) circuit configuration 8 6 1 2 3 7 5 4 1,2,3:source 4:gate 5,6,7,8:drain tpcc8005-h 2009-07-15 2 thermal characteristics characteristic symbol max unit thermal resistance, channel to case (tc = 25 ) r th (ch-c) ...
Description	power MOsFET (N-ch single VDss≤30V)
File Size	235.05K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TpC6006-h
OCR Text	...rrent pulse (note 1) i dp 15.6 a drain power dissipation (t = 5 s) (note 2a) p d 2.2 w drain power dissipation (t = 5 s) (note 2b) p d 0.7 w single pulse avalanche energy (note 3) e as 7 mj avalanche current i ar...
Description	power MOsFET (N-ch single 30V<VDss≤60V)
File Size	202.07K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TpCA8030-h
OCR Text	...t = 10 s) (note 2b) p d 1.6 w single-pulse avalanche energy (note 3) e as 75 mj avalanche current i ar 24 a repetitive avalanche energy (tc = 25 ) (note 4) e ar 3.0 mj channel temperature t ch 150 c storage temperature...
Description	TOshIBA Field Effect Transistor silicon N-Channel MOs Type (U-MOs V-h)
File Size	150.17K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TpCA8027-h
OCR Text	...(t = 10 s) (note 2b) p d 1.6 w single-pulse avalanche energy (note 3) e as 84 mj avalanche current i ar 30 a repetitive avalanche energy (tc = 25 ) (note 4) e ar 4.5 mj channel temperature t ch 150 c storage temperature...
Description	Field Effect Transistor
File Size	214.85K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TpCA8A02-h
OCR Text	... forward voltage: v dsf = ? 0.6 v (max) ? high-speed switching ? small gate charge: q sw = 8.6 nc (typ.) ? low drain-source on-re...k ) v dgr 30 v gate-source voltage v gss 20 v dc (note 1) i d 34 drain current pulsed (n...
Description	high Efficiency DC-DC Converter Applications Notebook pC Applications
File Size	211.67K / 8 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TpCp8007-h
OCR Text	...gs = 0 v, f = 1 mhz ? 3.2 4.6 rise time t r ? 2.4 ? turn-on time t on ? 7.8 ? fall time t f ? 2.4 ? switching time turn-off time t off duty 1%, t w = 10 s ? 18 ? ns v dd 48 v, v gs = 10 v, i d = 5 a...
Description	power MOsFET (N-ch single 30V<VDss≤60V)
File Size	177.46K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TpC8047-h
OCR Text	...p.) circuit configuration 8 6 1 2 3 7 5 4 start of commercial production 2008-10 tpc8047-h 2013-11-01 2 thermal characteristics characteristic symbol max unit thermal resistance, channel to ambient (t = 10 s) (note 2a) ...
Description	power MOsFET (N-ch single 30V<VDss≤60V)
File Size	203.80K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TpC8116-h
OCR Text	... circuit configuration 8 6 1 2 3 7 5 4 tpc8116-h 2006-01-17 2 thermal characteristics characteristic symbol max unit thermal resistance, channel to ambient (t = 10 s) (note 2a) r th (ch-a) 65.8 c/w thermal...
Description	high Efficiency DC/DC Converter Applications
File Size	303.27K / 7 Page	View it Online	Download Datasheet

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