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  600 650 Datasheet PDF File

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    MT8804 MT8804A MT8804AC MT8804AE MT8804AP

Mitel Semiconductor
MITEL[Mitel Networks Corporation]
Part No. MT8804 MT8804A MT8804AC MT8804AE MT8804AP
OCR Text ...A=2Vpp sinewave f= 1.0MHz; RL = 600. VINA=2Vpp sinewave f= 3.4kHz; RL = 600. VDC = 5V -90 dB 8 tPS 10 ns CL=50pF AC...650 250 650 250 500 200 500 300 900 400 1000 400 600 350 750 See Note 1 See Note 1 See Note...
Description CMOS 8 x 4 Analog Switch Array

File Size 89.51K  /  6 Page

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    UTC
Part No. 6N60
OCR Text 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charac...
Description 600/650 Volts N-CHANNEL MOSFET

File Size 175.00K  /  7 Page

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    AP2302LD-E1 AP2302LM- AP2302LM-E1 AP2302LMTR-E1 AP2302L AP2302LD- AP2302LDTR- AP2302LDTR-E1 AP2302LMTR-

BCD Semiconductor Manufacturing Limited
Part No. AP2302LD-E1 AP2302LM- AP2302LM-E1 AP2302LMTR-E1 AP2302L AP2302LD- AP2302LDTR- AP2302LDTR-E1 AP2302LMTR-
OCR Text ...50 Threshold Voltage (mV) 600 Threshold Voltage (mV) 600 550 550 VCNTL=3.3V 500 VCNTL=5.0V 500 VIN=2.5V VIN=...650(0.262) 5.200(0.205) 5.400(0.213) 0.430(0.017) 0.580(0.023) 2.200(0.087) 2.400(0.094) 9.500...
Description 2A DDR TERMINATION REGULATOR

File Size 126.05K  /  12 Page

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    NJG1129MD7

New Japan Radio
Part No. NJG1129MD7
OCR Text ... 11 400 450 500 550 600 650 700 750 0 800 Pin (dBm) Frequency (MHz) P-1dB(IN) vs. Frequency 0 IIP3, OIP3 vs. Frequency (f1=frequency, f2=f1+100kHz, Pin=-25dBm) 25 20 OIP3 -5 P-1dB(IN) (dBm) -10 ...
Description UHF BAND LOW NOISE AMPLIFIER GaAs MMIC

File Size 406.22K  /  15 Page

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    240-050-3P01A 240-050-3P01B 240-050-3P01C 240-050-3P01D 240-050-3P01E 240-050-3S01A 240-050-3S01B 240-050-3S01C 240-050-

GLENAIR INC
Glenair, Inc.
Part No. 240-050-3P01A 240-050-3P01B 240-050-3P01C 240-050-3P01D 240-050-3P01E 240-050-3S01A 240-050-3S01B 240-050-3S01C 240-050-3S01D 240-050-3S01E 240-050-3S01F 240-050-3S01G 240-050-3S01X 240-050-3S01Y 240-050-3S01Z 240-050-3P01Z 240-050-3P01Y 240-050-3P01F 240-050-3P01X 240-050-3P01X020207020207 240-050-3S01D020207020207 240-050-3P01D020207020207
OCR Text 600 Class A Size 3 Filter Receptacle Key Position Per ARINC 600 Attachment (18 Key Clocking Shown for Reference) Insert Arrangement Pe...650 .005 14x O 148 .003 D B C D E F G H J K 1 A 1.60 +.00 -.03 .153 -.012 A 1 A B C D...
Description FEMALE, MULTIWAY RACK AND PANEL CONN, SOLDER, RECEPTACLE
ARINC 600 Class A Size 3 Filter Receptacle

File Size 637.08K  /  2 Page

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    MICROSEMI CORP-SCOTTSDALE
Part No. MSPSMBJ5915D MQSMBJ5915DE3TR MSPSMBJ5922D MQSMBG5932ATR MQSMBG5933BTR MQSMBG5933CTR MQSMBG5933DTR MICROSEMICORP-SCOTTSDALE-MQSMBG5914E3TR MQSMBG5914CTR MQSMBG5915CTR
OCR Text ... 14.0 0.25 0.25 0.25 0.25 600 600 650 650 1.0 1.0 1.0 1.0 11.4 12.2 13.7 15.2 133 122 110 100 smbg5933 smbg5934 smbg5935 smbg5936 smbj5933 smbj5934 smbj5935 smbj5936 22 24 27 30 17.0 15.6 13.9 12.5 17.5...
Description 3.9 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA
7.5 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA
20 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-215AA
22 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-215AA
3.6 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-215AA
3.9 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-215AA

File Size 88.86K  /  3 Page

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    STW21NM60ND STI21NM60ND STP21NM60ND STB21NM60ND

STMicroelectronics
Part No. STW21NM60ND STI21NM60ND STP21NM60ND STB21NM60ND
OCR Text 600 V, 0.17 17 A FDmeshTM II Power MOSFET , 2PAK, I2PAK, TO-220FP, TO-220, TO-247 D Features Type STB21NM60ND STI21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND VDSS @ TJmax 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.22 < 0.22 < 0.22 ...
Description N-channel 600 V, 0.17 Ω, 17 A FDmesh?/a> II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
N-channel 600 V, 0.17 ヘ, 17 A FDmesh⑩ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

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    IDH20G65C512

Infineon Technologies AG
Part No. IDH20G65C512
OCR Text ...0 v, t j =25c ? 0.26 74 v r =600 v, t j =25c ? 4.1 1450 v r =650 v, t j =150c table 6 ac characteristics parameter symbol values unit note/test condition min. typ. max. total capacitive charge q c ? 29 nc v r =400 v, ...
Description ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

File Size 1,174.45K  /  11 Page

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    NCP5111-16

ON Semiconductor
Part No. NCP5111-16
OCR Text ...res ? high voltage range: up to 600 v ? dv/dt immunity 50 v/nsec ? gate drive supply range from 10 v to 20 v ? high and low drive outputs ...650 ns) ? under v cc lockout (uvlo) for both channels ? pin?to?pin compatible with industry standar...
Description High Voltage, High and Low Side Driver

File Size 100.98K  /  14 Page

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    1SMB5935 1SMB5950 1SMB5951 1SMB5952

Taiwan Semiconductor Company, Ltd
Part No. 1SMB5935 1SMB5950 1SMB5951 1SMB5952
OCR Text ...120 140 160 200 250 300 380 450 600 700 900 1200 550 550 550 600 600 650 650 650 700 700 750 800 850 900 950 1000 1100 1300 1500 1700 2000 2500 3000 3100 4000 4500 5000 6000 6500 7000 8000 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0...
Description 3.0 Watts Surface Mount Silicon Zener Diode

File Size 226.59K  /  4 Page

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