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NXP Semiconductors N.V.
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Part No. |
BUK9506-75B BUK9506-75B-15
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OCR Text |
...arge v gs =5v; i d =25a; v ds =60v; t j =25c; see figure 13 -37-nc table 1. quick reference data ?continued symbol parameter conditions m...0 50 100 150 200 25 50 75 100 125 150 175 200 t mb (c) i d (a) capped at 75 a due to package t mb ... |
Description |
N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管
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File Size |
190.57K /
13 Page |
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KEC
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Part No. |
050N60PA KMB050N60PA
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OCR Text |
... applications features v dss = 60v, i d = 50a drain-source on resistance : r ds(on) =18m (max.) @v gs = 10v mosfet maximum rating (ta=2...0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 ... |
Description |
N CHANNEL MOS FIELD EFFECT TRANSISTOR Search --To KMB050N60PA
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File Size |
501.46K /
6 Page |
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NXP Semiconductors N.V.
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Part No. |
BUK7506-75B
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OCR Text |
...rge v gs =10v; i d =25a; v ds =60v; t j =25c; see figure 13 -28-nc table 1. quick reference data ?continued symbol parameter conditions m...0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 175 200 t mb (c) i d (a) capped at 75 a due ... |
Description |
N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
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File Size |
183.87K /
13 Page |
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it Online |
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DnI
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Part No. |
DFB50N06
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OCR Text |
... 0.023 ohm i d = 50a bv dss = 60v 1.gate 2.drain 3.source to-263 (d2-pak) 1 2 3
copyright@ d&i semiconductor co., ltd., korea . all rights reserved ... |
Description |
N-Channel MOSFET
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File Size |
634.21K /
7 Page |
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it Online |
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