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MICROSEMI[Microsemi Corporation]
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| Part No. |
MSASC150W100L MSASC150W100LR 1N6823 1N6823R
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| OCR Text |
8220 FAX: (714) 966-5256
1N6823
(MSASC150W100L)
Features
* * * * * * Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial... |
| Description |
LOW LEAKAGE SCHOTTKY DIODE Schottky Rectifier
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| File Size |
80.10K /
2 Page |
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it Online |
Download Datasheet
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MICROSEMI[Microsemi Corporation]
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| Part No. |
MSAFX76N07A
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| OCR Text |
8220 FAX: (714) 966-5256
MSAFX76N07A
70 Volts 76 Amps 12 m
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Features
* * * * *
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Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS... |
| Description |
N Channel MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
47.66K /
2 Page |
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it Online |
Download Datasheet
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MICROSEMI[Microsemi Corporation]
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| Part No. |
MSAHX60F60A MSAGX60F60A
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| OCR Text |
8220 FAX: (714) 966-5256
MSAGX60F60A MSAHX60F60A
600 Volts 60 Amps 2.9 Volts vce(sat)
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Features
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Rugged polysilicon gate cell structure high current handling capability,... |
| Description |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
50.27K /
2 Page |
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it Online |
Download Datasheet
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MICROSEMI[Microsemi Corporation]
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| Part No. |
1N6705 1N6705R
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| OCR Text |
8220 FAX: (714) 966-5256
1N6705 1N6705R
400 Volts 20 Amps 35 ns
Features
* * * *
passivated mesa structure for very low leakage currents Epitaxial structure minimizes forward voltage drop Hermetically sealed surface mount power p... |
| Description |
Ultra Fast Rectifier (less than 100ns) ULTRAFAST RECTIFIER
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| File Size |
46.06K /
2 Page |
View
it Online |
Download Datasheet
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Price and Availability
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