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IRF[International Rectifier]
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Part No. |
IRG4IBC30S
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OCR Text |
...Emitter Saturation Voltage -- 1.84 -- IC = 34A See Fig.2, 5 V -- 1.45 -- IC = 18A , TJ = 150C Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, I...0W
T ria n g u la r w a v e :
I
F o r bo th:
10
Id e a l d io d e s
5
C la m p v o ... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR
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File Size |
124.11K /
8 Page |
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ADPOW[Advanced Power Technology]
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Part No. |
APT10M11B2VFR APT10M11LVFR
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OCR Text |
...s.
0.48 (.019) 0.76 (.030) 0.84 (.033) 1.30 (.051) 2.79 (.110) 2.59 (.102) 3.18 (.125) 3.00 (.118) 5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
... |
Description |
High Voltage N-Channel enhancement mode power MOSFET
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File Size |
64.99K /
4 Page |
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ADPOW[Advanced Power Technology]
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Part No. |
APT6015LVFR
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OCR Text |
...e Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
050-5945 Rev- 1-2000
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one... |
Description |
POWER MOS V 600V 38A 0.150 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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File Size |
59.90K /
4 Page |
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INFINEON[Infineon Technologies AG]
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Part No. |
Q67040-S4340 SKP06N60 Q67040-S4230 Q67040-S4231 SKA06N60 SKB06N60
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OCR Text |
... 70 0.167 0.153 0.320 29 20 298 84 0.192 0.199 0.391 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L an d S...0W 25C
50C
75C
100C
125C
0A 25C
50C
75C
100C
125C
TC, CASE TEMPERATURE... |
Description |
Fast S-IGBT in NPT-Technology with An... IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT Diode IGBTs & DuoPacks - 6A 600V TO220-3-31 (Fullpack) IGBT Diode Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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File Size |
446.91K /
15 Page |
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it Online |
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Price and Availability
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