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MOTOROLA[Motorola, Inc]
Motorola Mobility Holdings, Inc.
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| Part No. |
MMSF10N02Z ON2248 MMSF10N02ZR2 ON2247
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
From old datasheet system
SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS
10000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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| File Size |
181.09K /
10 Page |
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it Online |
Download Datasheet
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Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
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| Part No. |
MMSF10N03Z MMSF10N03Z_D ON2249
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
Medium Power Surface Mount Products
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| File Size |
191.96K /
10 Page |
View
it Online |
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Motorola Mobility Holdings, Inc.
Motorola, Inc
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| Part No. |
MTD20N06HDL ON2483
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
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| File Size |
292.90K /
12 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MTD6P10E ON2515 MTD6P10E-T4
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
6 A, 100 V, 0.66 ohm, P-CHANNEL, Si, POWER, MOSFET
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM
From old datasheet system
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| File Size |
261.39K /
10 Page |
View
it Online |
Download Datasheet |
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