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				Fairchild Semiconductor Diodes Incorporated
Part No.	FCP25N60N
OCR Text	...parameter fcp25n60n_f102 unit v dss drain to source voltage 600 v v gss gate to source voltage 30 v i d drain current continuous (t c = 25 o c) 25 a continuous (t c = 100 o c) 16 i dm drain current pulsed ...
Description	N-Channel SupreMOSMOSFET 600V, 25A, 125m N-Channel SupreMOS? MOSFET 600 V, 25 A, 125 mΩ
File Size	448.85K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TK12E60W
OCR Text	...2) (note 1) (note 1) symbol v dss v gss i d i dp p d e as i ar i dr i drp t ch t stg tor rating 600 30 11.5 46.0 110 140 3.0 11.5 46.0 150 -55 to 150 0.6 unit v a w mj a n m note: using continuously under heavy loads (e.g. the a...
Description	Switching Voltage Regulators MOSFETs Silicon N-Channel MOS (DTMOS? MOSFETs Silicon N-Channel MOS (DTMOS?
File Size	252.73K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	...urce Breakdown Voltage 500 V(BR)dss/TJ Breakdown Voltage Temp. Coefficient --- RDS(on) Static Drain-to-Source On-Resistance --- VGS(th) Gate Threshold Voltage 2.0 gfs Forward Transconductance 4.0 --- Idss Drain-to-Source Leakage Current ---...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TK12E60U
OCR Text	...yp.) (3) low leakage current: i dss = 100 a (max) (v ds = 600 v) (4) enhancement mode: v th = 3.0 to 5.0 v (v ds = 10 v, i d = 1 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal...
Description	Switching Voltage Regulators MOSFETs Silicon N-Channel MOS (DTMOS? MOSFETs Silicon N-Channel MOS (DTMOS?
File Size	240.87K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9410
OCR Text	...less otherwise specified) V(BR)dss V(BR)dss/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
File Size	103.18K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520NL IRF9520NS
OCR Text	...o-Source Breakdown Voltage V(BR)dss/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)dss Idss IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss C...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
File Size	151.66K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520N
OCR Text	...less otherwise specified) V(BR)dss V(BR)dss/TJ RDS(on) VGS(th) gfs Idss IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source...
Description	Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
File Size	91.94K / 8 Page	View it Online	Download Datasheet

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