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For eon Found Datasheets File :: 4800 Search Time::1.187ms
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				IRF[International Rectifier]
Part No.	GA75TS60U
OCR Text	...Qg Qge Qgc td(on) tr td(off) tf eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay ...
Description	HALF-BRIDGE IGBT INT-A-PAK
File Size	213.44K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG11N120CND
OCR Text	... 3) td(ON)I trI td(OFF)I tfI eon EOFF IGBT and Diode at TJ = 25oC, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10 , L = 2mH, Test Circuit (Figure 20) (c)2001 Fairchild Semiconductor Corporation HGTG11N120CND Rev. B HGTG11N120CND ...
Description	43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	108.55K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A
OCR Text	...ion td(ON)I trI td(OFF)I tfI eon EOFF td(ON)I trI td(OFF)I tfI eon EOFF IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25 L = 1mH Test Circuit (Figure 19) HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B ...
Description	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode 27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB
File Size	202.82K / 7 Page	View it Online	Download Datasheet

				Eon Silicon Solution Inc.
Part No.	EN71PL032A0-70CW EN71PL032A0-70CWP
OCR Text	...ical specifications. (c)2004 eon Silicon Solution, Inc., www.eonssi.com Rev. B, Issue Date: 2008/09/10 EN71PL032A0 MCP Block Diagram This Data Sheet may be revised by subsequent versions or modifications due to changes in tec...
Description	Stacked Multi-Chip Product (MCP) Flash Memory and RAM
File Size	209.63K / 7 Page	View it Online	Download Datasheet

				Harris, Corp. HARRIS[Harris Corporation] Fairchild Semiconductor
Part No.	HGTP12N60C3 HGT1S12N60C3 HGT1S12N60C3S
OCR Text	...TE: tD(ON)I tRI tD(OFF)I tFI eon EOFF RJC TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 25, L = 100H 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing...
Description	24A, 600V, UFS Series N-Channel IGBTs 4A00V的，的ufs系列N沟道IGBT 24A/ 600V/ UFS Series N-Channel IGBTs
File Size	131.11K / 6 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTGT300TL60G
OCR Text	...Td(off) Tf Td(on) Tr Td(off) Tf eon Eoff Isc RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off...
Description	Three level inverter Trench Field Stop IGBT Power Module
File Size	217.02K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL
OCR Text	... 3) td(ON)I trI td(OFF)I tfI eon EOFF IGBT and Diode at TJ = 25oC, ICE = 5A, VCE = 960V, VGE = 15V, RG = 25, L = 5mH, Test Circuit (Figure 20) (c)2003 Fairchild Semiconductor Corporation HGTG5N120BND, HGTP5N120BND, Rev. B1 HG...
Description	3.3V 72-mc CPLD 21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
File Size	175.44K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation] Fairchild Semiconductor, Corp.
Part No.	HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND
OCR Text	... 3) td(ON)I trI td(OFF)I tfI eon EOFF IGBT and Diode at TJ = 25oC ICE = 5.5A VCE = 0.8 BVCES VGE = 15V RG = 25 L = 5mH Test Circuit (Figure 20) 2 HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Electrical Specifications PARAMETER C...
Description	From old datasheet system 25A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25A, 1200V,NPT系列N沟道绝缘栅双极型晶体 5 A, 1200 V, N-CHANNEL IGBT, TO-247
File Size	86.05K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A
OCR Text	... 3) td(ON)I trI td(OFF)I tfI eon EOFF IGBT and Diode at TJ = 25oC, ICE = 5A, VCE = 0.8 BVCES , VGE = 15V, RG = 25, L = 5mH, Test Circuit (Figure 20) 2 HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Electrical Specifications PARAME...
Description	From old datasheet system 21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N沟道绝缘栅双极型晶体 21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB
File Size	88.17K / 7 Page	View it Online	Download Datasheet

				Renesas
Part No.	RJP60F4DPM
OCR Text	...acteristics ( typical) (4) eoff eon swithing energy losses e () switching ti mes t (ns) 1 10 200100 10 1000 100 100000 10000 swithing energy losses e () 1 10 100 collector current i c (a) (inductive load) eoff eon switching ...
Description	N-Channel IGBT
File Size	135.17K / 7 Page	View it Online	Download Datasheet

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