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  fet-1 Datasheet PDF File

For fet-1 Found Datasheets File :: 21836    Search Time::1.375ms    
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    2SJ452

HITACHI[Hitachi Semiconductor]
Part No. 2SJ452
OCR Text FET ADE-208-383 1st. Edition Application Low frequency power switching Features * * * * Low on-resistance. Low drive power 2.5 V ...1 2 D 1. Source 2. Gate 3. Drain G S 2SJ452 Absolute Maximum Ratings (Ta = 25C) Item Drai...
Description    Silicon P-Channel MOS FET

File Size 39.33K  /  8 Page

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    2SJ471

HITACHI[Hitachi Semiconductor]
Part No. 2SJ471
OCR Text FET High Speed Power Switching ADE-208-540 1st. Edition Features * Low on-resistance R DS(on) = 25 m typ. * 4V gate drive devices. * Hig...1. Gate 2. Drain 3. Source 2SJ471 Absolute Maximum Ratings (Ta = 25C) Item Drain to source volt...
Description Silicon P Channel DV-L MOS FET High Speed Power Switching

File Size 46.25K  /  10 Page

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    2SJ475-01

FUJI[Fuji Electric]
Part No. 2SJ475-01
OCR Text ...ansconductance P-channel MOS-FET -60V 0,06 25A 50W > Outline Drawing > Applications - Motor Control - General Purpose Po...1,0 Typ. -1,5 -10 -0,2 10 0,08 0,045 15 2000 700 450 15 80 190 90 -2,0 160 0,9 Max. -2,5 -500 ...
Description FAP-III Series

File Size 296.96K  /  2 Page

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    2SJ479 2SJ479L 2SJ479S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ479 2SJ479L 2SJ479S
OCR Text FET High Speed Power Switching ADE-208-541 1st. Edition Features * Low on-resistance R DS(on) = 25 m typ. * 4V gate drive devices. * High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3....
Description Power switching MOSFET
Silicon P Channel DV-L MOS FET High Speed Power Switching
Silicon P Channel DVL MOS FET High Speed Power Switching

File Size 37.54K  /  7 Page

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    2SJ483

HITACHI[Hitachi Semiconductor]
Part No. 2SJ483
OCR Text FET High Speed Power Switching ADE-208-519 1st. Edition Features * Low on-resistance R DS(on) = 0.08 typ (at VGS = -10 V, I D = -2.5 A) ...1 1. Source 2. Drain 3. Gate 2SJ483 Absolute Maximum Ratings (Ta = 25C) Item Drain to source...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.73K  /  9 Page

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    2SJ484

HITACHI[Hitachi Semiconductor]
Part No. 2SJ484
OCR Text FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features * Low on-resistance R DS(on) = 0.18 typ. (at V GS = -10V, ID = -1A) ...1 4 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SJ484 Absolute Maximum Ratings (Ta = ...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 42.55K  /  9 Page

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    2SJ486

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ486
OCR Text FET Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features * Low on-resistance R DS(on) = 0.5 typ. (at V GS = -4V, ID = -100 ...1 D 2 G 1. Source 2. Gate 3. Drain S 2SJ486 Absolute Maximum Ratings (Ta = 25C) Item...
Description RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开
Silicon P Channel MOS FET Low FrequencyPower Switching
Silicon P-Channel MOS FET

File Size 40.30K  /  8 Page

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    2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00

NEC[NEC]
Part No. 2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SJ492 2SJ492-S 2SJ492-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product ...1 = 100 m (MAX.) (VGS = -10 V, ID = -10 A) RDS(on)2 = 185 m (MAX.) (VGS = -4 V, ID = -10 A) * Low Ci...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 70.31K  /  8 Page

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    2SJ493 D11265EJ3V0DS00

NEC[NEC]
Part No. 2SJ493 D11265EJ3V0DS00
OCR Text FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SJ493 PACKAGE Isolated TO-220 DESCRIPTION This product is P-Channel MOS Field Eff...1 = 100 m (MAX.) (VGS = -10 V, ID = -8 A) RDS(on)2 = 185 m (MAX.) (VGS = -4 V, ID = -8 A) * Low Ciss...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 64.87K  /  8 Page

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    2SJ494 D11266EJ2V0DS00

NEC[NEC]
Part No. 2SJ494 D11266EJ2V0DS00
OCR Text FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. ...1 40.2 FEATURES * Super Low On-State Resistance RDS(on)1 = 50 m: Max. (VGS = -10 V, ID = -10 A) ...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 68.73K  /  8 Page

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For fet-1 Found Datasheets File :: 21836    Search Time::1.375ms    
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