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  ghz 4 8 Datasheet PDF File

For ghz 4 8 Found Datasheets File :: 24363    Search Time::2.625ms    
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    BFS17R BFS17W BFS17

Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
Vishay Siliconix
Part No. BFS17R BFS17W BFS17
OCR Text ...or broadband amplifiers up to 1 ghz. Features D High power gain D SMD-package 1 1 13 581 94 9280 9510527 13 581 2 3 3 ...4, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 1 (10) BFS17/BFS17R/BFS17W Vishay Telefu...
Description Silicon NPN Planar RF Transistor
From old datasheet system

File Size 148.66K  /  10 Page

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    BFS17S Q62702-F1645

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS17S Q62702-F1645
OCR Text ...1.3 1.4 2.5 0.55 0.13 1.45 - ghz IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz Collector-base capacitance Ccb 0.8 1.5 pF VCB = 5 V, f = 1 MHz Collector-emitter capacitance Cce - VCE = 5 V, f =...
Description NPN Silicon RF Transistor (For broadband amplifiers up to 1ghz at collector currents from 1mA to 20mA)
From old datasheet system

File Size 55.96K  /  5 Page

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    BFS17W

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFS17W
OCR Text ghz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 04 Phil...4.5 TYP. - - 1.5 - - - PARAMETER thermal resistance from junction to soldering point CONDITIONS up t...
Description NPN 1ghz wideband transistor(NPN 1G赫兹 宽带晶体
NPN 1 ghz wideband transistor

File Size 46.15K  /  6 Page

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    BFS17

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BFS17
OCR Text ghz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product ...4.5 TYP. MAX. 25 15 25 300 - - UNIT V V mA mW ghz dB LIMITING VALUES In accordance with the Absol...
Description NPN 1 ghz wideband transistor

File Size 37.46K  /  6 Page

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    KGF1323

OKI electronic componet...
OKI[OKI electronic componets]
OKI electronic eomponets
Part No. KGF1323
OCR Text ...= 240 mA Frequency : 0.5 to 3.0 ghz Z0 = 50 W 6/7 electronic components KGF1323 Test Circuit and Bias Configuration for KGF1323 at 850 MHz VGS CF CB CB CF VDS RFC IN CC C1 T1 T2 (1) (2) (3) T...
Description From old datasheet system
Power FET(Plastic Package Type)

File Size 81.61K  /  7 Page

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    LLE16045X

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. LLE16045X
OCR Text ...sional applications between 1.5 ghz and 1.8 ghz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap ...4 columns LLE16045X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 C in a common em...
Description NPN microwave power transistor

File Size 75.36K  /  12 Page

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    NE4210M01 NE4210M01-T1

NEC[NEC]
Part No. NE4210M01 NE4210M01-T1
OCR Text ...TYP., Ga = 11 dB TYP. at f = 12 ghz 6pin super minimold package Gate Width: Wg = 200m ORDERING INFORMATION Part Number NE4210M01-T1 Pack...4.0 -3.0 IDSS 100 125 125 -65 to +125 Unit V V mA A mW C C The information in this document i...
Description C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

File Size 77.13K  /  12 Page

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    NE4210S01 NE4210S01-T1 NE4210S01-T1B

NEC Corp.
NEC[NEC]
Part No. NE4210S01 NE4210S01-T1 NE4210S01-T1B
OCR Text ... TYP. Ga = 13.0 dB TYP. @f = 12 ghz * Gate Length: Lg 0.20 m * Gate Width : Wg = 160 m ORDERING INFORMATION (PLAN) Part Number NE4210S0...4 kp/reel Remark To order evaluation samples, please contact your local NEC sales office. (Part n...
Description X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

File Size 62.93K  /  16 Page

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    Q62702-F1124 BF770A

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1124 BF770A
OCR Text ... fT 4.5 6 0.55 0.23 1.7 - ghz pF 0.9 dB 2 3.3 - IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance...
Description NPN Silicon RF Transistor (For IF amplifiers in TV-sat tuners and for VCR modulators)
From old datasheet system

File Size 19.68K  /  3 Page

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    Q62702-F1129 BF998

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1129 BF998
OCR Text ...controlled input stages up to 1 ghz Type BF 998 Marking MO Ordering Code (tape and reel) Q62702-F1129 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum Ratings Parameter Drain-source voltage Drain current Gate ...
Description Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 ghz)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 ghz)

File Size 180.18K  /  8 Page

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