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259135 ACD2204 ERJ12Z NCP3218A 99313 DN6847TE N03GP 2N5154
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    Guangzhou Juxing Electronic Co., Ltd.
Guangzhou Juxing Electr...
Part No. SK85
OCR Text ... rrm 20 v to 100 v i fsm 200a y maximum ratings & thermal characteristics (t a = 25 c unless otherwise noted) note 1: mounted on p.c.b. with 0.55 0.55'' ( 14 14 mm ) copper pad areas. electrical characteristics (t a = 25 c unless oth...
Description Surface Mount Schottky Rectifiers

File Size 657.77K  /  3 Page

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    SI4774DY SI4774DY-T1-GE3

Vishay Siliconix
Part No. SI4774DY SI4774DY-T1-GE3
OCR Text ... 1" fr4 board. c. t = 10 s. d. maximum under steady stat e conditions is 85 c/w. product summary v ds (v) r ds(on) ( ? )i d (a) a q g (typ.) 30 0.0095 at v gs = 10 v 16 9.5 nc 0.0120 at v gs = 4.5 v 15 so-8 sd sd sd gd 5 6 ...
Description N-Channel 30 V (D-S) MOSFET with Schottky Diode

File Size 269.96K  /  10 Page

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    SI4682DY-T1-GE3

Vishay Siliconix
Part No. SI4682DY-T1-GE3
OCR Text ...x 1? fr4 board. c. t = 10 s. d. maximum under steady state conditions is 90 c/w. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 co...
Description TRANSISTOR 16 A, 30 V, 0.0094 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power

File Size 249.69K  /  10 Page

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    SI4682DY-T1-E3

VISHAY SILICONIX
Part No. SI4682DY-T1-E3
OCR Text ...x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 90 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 cont...
Description 16 A, 30 V, 0.0094 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 235.70K  /  10 Page

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    TY Semiconductor Co., Ltd
Part No. SI2336DS
OCR Text ...x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 130 c/w. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 8 cont...
Description Halogen-free TrenchFET? Power MOSFET 100 % Rg

File Size 130.33K  /  2 Page

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    SI2333DDS-T1-GE3

Vishay Siliconix
Part No. SI2333DDS-T1-GE3
OCR Text ... 1" fr4 board. c. t = 5 s. d. maximum under steady st ate conditions is 175 c/w. e. package limited. mosfet product summary v ds (v) r ds(on) ( ? ) max. i d (a) a q g (typ.) - 12 0.028 at v gs = - 4.5 v - 6 e 9 nc 0.032 at v gs ...
Description P-Channel 12 V (D-S) MOSFET

File Size 229.33K  /  10 Page

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    TY Semiconductor Co., Ltd
Part No. SI2333CDS
OCR Text ... 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 166 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 12 v gate-source voltage v gs 8 conti...
Description TrenchFET? Power MOSFET

File Size 120.71K  /  2 Page

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    RF MONOLITHICS INC
Part No. SF2008D
OCR Text ...tive 2002/95/ec (rohs) absolute maximum ratings rating value units maximum incident power in passband 0 dbm maximum dc voltage between any two terminals 30 vdc storage temperature range in tape and reel -40 to +85 c suitable for lead-free s...
Description 1 FUNCTIONS, 930.5 MHz, SAW FILTER

File Size 162.17K  /  4 Page

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    SF2008D

Murata Manufacturing Co., Ltd.
Part No. SF2008D
OCR Text ...tive 2002/95/ec (rohs) absolute maximum ratings rating value units maximum incident power in passband 0 dbm maximum dc voltage between any two terminals 30 vdc storage temperature range in tape and reel -40 to +85 c suitable for lead-free s...
Description 930.5 MHz SAW Filter

File Size 127.65K  /  4 Page

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    2SA673A 2SA673AK 2SA673A_K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA673A 2SA673AK 2SA673A_K
OCR Text ...e 3 2 1 2SA673A(K) Absolute maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VC...
Description Silicon PNP Epitaxial

File Size 35.43K  /  8 Page

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